K9K1G08R0B SAMSUNG [Samsung semiconductor], K9K1G08R0B Datasheet - Page 21

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K9K1G08R0B

Manufacturer Part Number
K9K1G08R0B
Description
128M x 8 Bit NAND Flash Memory
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet

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Read1 Operation
Read2 Operation
K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
CLE
CE
WE
ALE
RE
I/O
R/B
CLE
CE
WE
ALE
RE
I/O
R/B
0
0
~
~
7
7
50h
00h or 01h
(Intercepted by CE)
(Read One Page)
M Address
Column
Address
A
0
~ A
A
0
7
~ A
A
A
0
4
7
A
~A
~A
9
~ A
3
7
A
: Valid Address
: Don
9
~ A
16
Page(Row)
Address
16
′t
A
care
17
A
~ A
17
~ A
24
24
A
25,
A
A
25,
21
26
A
t
t
WB
WB
26
Busy
t
t
RR
R
t
AR
Dout N
t
R
Dout N+1
t
AR
t
RC
Selected
Row
t
RR
FLASH MEMORY
Dout N+2
t
CHZ
511+M
Dout
Advance
512
Dout 527
address M
Start
16

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