CEP01N6 CET [Chino-Excel Technology], CEP01N6 Datasheet - Page 2

• Manufacturer Part Number: CEP01N6
• Description: N-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: CET [Chino-Excel Technology]

Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
Forwand Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.L = 190mH, I
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
AS
= 0.8A, V
Parameter
DD
= 50V, R
G
= 25
c
c
Starting T
J
b
= 25 C .
T c = 25 C unless otherwise noted
Symbol
R
V
BV
t
t
V
I
Q
I
GS(th)
DS(on)
d(on)
d(off)
Q
g
C
I
GSSF
Q
C
C
GSSR
I
DSS
t
t
SD
FS
S
r
gd
f
gs
oss
DSS
iss
rss
g
b
CEP01N6/CEB01N6
CEI01N6/CEF01N6
2
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
V
V
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
Test Condition
= 10V, R
= 0V, I
= 600V, V
= 30V, V
= -30V, V
= V
= 10V, I
= 20V, I
= 25V, V
= 300V, I
= 480V, I
= 10V
= 0V, I
DS
, I
D
S
D
D
D
GEN
= 250 µ A
= 0.8A
GS
D
D
DS
DS
= 0.4A
= 250 µ A
= 0.4A
GS
= 0.4A,
= 0.8A,
= 0V
= 0V
= 0V
= 4.7
= 0V
Min
650
2
Typ
136
0.5
1.0
4.4
12
46
19
19
13
24
35
6
Max
-10
0.8
1.6
15
38
26
48
70
10
1
4
8
Units
µ A
µ A
µ A
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V
6