CEP01N6 CET [Chino-Excel Technology], CEP01N6 Datasheet - Page 3

• Manufacturer Part Number: CEP01N6
• Description: N-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: CET [Chino-Excel Technology]

240
200
160
120
1.5
1.2
0.9
0.6
0.3
0.0
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
40
0
-50
0
0
Figure 5. Gate Threshold Variation
V
I
D
Figure 1. Output Characteristics
DS
=250µA
V
V
-25
T
=V
DS
DS
J
, Junction Temperature( C)
5
5
GS
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
0
with Temperature
25
10
10
V
GS
50
=10,9,8V
75
15
15
100
20
20
125
C iss
C oss
C rss
150
25
25
CEP01N6/CEB01N6
CEI01N6/CEF01N6
3
10
10
10
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
-1
-2
-100
Figure 6. Body Diode Forward Voltage
0.2
1
V
Figure 4. On-Resistance Variation
I
V
SD
D
Figure 2. Transfer Characteristics
GS
Variation with Source Current
=0.4A
V
, Body Diode Forward Voltage (V)
T
=10V
GS
-50
J
2
, Junction Temperature( C)
0.6
, Gate-to-Source Voltage (V)
T
with Temperature
J
=125 C
0
3
1.0
50
4
1.4
100
5
25 C
1.8
150
6
-55 C
200
2.2
7