P4C422-10CC PYRAMID [Pyramid Semiconductor Corporation], P4C422-10CC Datasheet - Page 2

• Manufacturer Part Number: P4C422-10CC
• Description: HIGH SPEED 256 x 4 STATIC CMOS RAM
• Manufacturer: PYRAMID [Pyramid Semiconductor Corporation]

MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
2. Extended temperature operation guaranteed with 400 linear feet per
3. For test purposes, not more than one output at a time should be
4. This parameter is sampled and not 100% tested.
Document # SRAM101 REV. A
Symbol
Symbol
V
V
T
Symbol
Commercial
Military
V
V
V
V
V
I
I
I
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
minute of air flow.
shorted. Short circuit test duration should not exceed 30 seconds.
CC
TERM
A
IX
OZ
OS
OH
OL
IH
IL
CL
I
CC
Grade
P4C422
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND
(up to 7.0V)
Operating Temperature
(2)
Output High Voltage
Output Low Voltage
Input High Voltage
Input Low Voltage
Input Clamp Diode Voltage
Input Load Current
Output Current (High Z)
Output Short Circuit
Current
Dynamic Operating Current
Parameter
Parameter
–55°C to 125°C
Ambient Temp
(3)
0°C to 70°C
Parameter
(1)
– 55 to +125
– 0.5 to +7
V
Gnd
0V
0V
– 0.5 to
Value
CC
I
I
I
GND V
V
V
OH
OL
IN
OL
CC
+0.5
= +8 mA, V
= –5.2 mA, V
= –10 mA
= Max., V
5.0V ±10%
5.0V ±10%
Temperature
V
Commercial
Test Conditions
OUT
Vcc
Range
Military
IN
Unit
°C
V
V
V
V
OUT
OH
CC
CC
, Output Disabled
CC
= GND
= Min.
(2)
= Min.2.4
5. Transition time is
6. Transition time is
7. t
CAPACITANCES
(V
Symbol
T
T
I
Symbol
C
C
20, 25, and 35 ns products, see Fig 1d. Timing is referenced at input
and output levels of 1.5V. The output loading is equivalent to the
specified I
20, 25, 35) as in Fig. 1a and 1b respectively.
20, 25, and 35 ns products, see Fig 1d. Transition is measured at
steady state HIGH level -500mV or steady state LOW level +500mV
on the output from a level on the input with load shown in Fig. 1c.
OUT
CC
W
BIAS
STG
IN
OUT
is measured at t
N/A
-10
90
= 5.0V, T
OL
Output Capacitance V
Input Capacitance
Temperature Under
Bias
Storage Temperature
DC Output Current
/I
N/A
-12
90
OH
Parameter
A
with a load capacitance of 15 pF (10, 12) or 30 pF (15,
Parameter
= 25°C, f = 1.0MHz)
WSA
3ns for 10, 12, and 15 ns products and
3ns for 10, 12, and 15 ns products and
-15
90
90
= min.; t
(4)
WSA
–1.5
Min
-20
–10
–10
90
90
2.1
is measured at t
Conditions Typ. Unit
P4C422
V
OUT
IN
-25
65
90
= 0V
= 0V
– 55 to +125
– 65 to +150
Value
Max
0.4
0.8
10
10
90
20
V
-35
W
65
90
= min.
Page 2 of 10
5
7
Unit
mA
mA
5ns for
5ns for
Unit
Unit
mA
mA
pF
pF
µA
µA
°C
°C
V
V
V
V