P4C1023 PYRAMID [Pyramid Semiconductor Corporation], P4C1023 Datasheet - Page 5

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P4C1023

Manufacturer Part Number
P4C1023
Description
LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM
Manufacturer
PYRAMID [Pyramid Semiconductor Corporation]
Datasheet
Document # SRAM126 REV OR
AC CHARACTERISTICS - WRITE CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Notes:
6. CE and WE are LOW for WRITE cycle.
7. OE is LOW for this WRITE cycle to show twz and tow.
8. Write Cycle Time is measured from the last valid address to the first transitioning address.
WRITE CYCLE NO. 1 (WE
Symbol
t
t
t
t
t
t
t
t
t
t
OW
WC
CW
AW
WP
DW
WZ
AS
AH
DH
Write Cycle Time
Chip Enable Time
to End of Write
Address Valid to
End of Write
Address Set-up Time
Write Pulse Width
Address Hold Time
Data Valid to End
of Write
Data Hold Time
Write Enable to
Output in High Z
Output Active from
End of Write
Parameter
WE
WE
WE
WE CONTROLLED)
Min
55
50
40
25
50
0
0
0
5
(6)
-55
Max
25
Min
70
60
50
30
60
0
0
0
5
-70
Max
30
P4C1023/P4C1023L
Page 5 of 11
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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