P4C167 PYRAMID [Pyramid Semiconductor Corporation], P4C167 Datasheet - Page 2

• Manufacturer Part Number: P4C167
• Description: ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS
• Manufacturer: PYRAMID [Pyramid Semiconductor Corporation]

Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
MAXIMUM RATINGS
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
n/a = Not Applicable
Document # SRAM106 REV A
Military
Industrial
Symbol
Commercial
Symbol
V
V
T
Grade(2)
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
CC
TERM
A
V
V
V
V
V
V
V
I
I
I
I
SB1
LO
SB
P4C167
HC
CD
OL
OH
LI
LC
IH
IL
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND
(up to 7.0V)
Operating Temperature
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage
(TTL Load)
Input Leakage Current
Output Leakage Current
Standby Power Supply
Current (TTL Input Levels)
Standby Power Supply
Current
(CMOS Input Levels)
Output High Voltage
(TTL Load)
–55°C to +125°C
–40°C to +85°C
Parameter
Temperature
0°C to +70°C
Ambient
Parameter
(1)
GND
0V
0V
0V
–55 to +125
–0.5 to +7
V
–0.5 to
V
I
I
V
V
CE
V
f = Max., Outputs Open
CE
V
f = 0, Outputs Open
V
V
V
Value
CC
OL
OH
CC
CC
IN
CC
CC
IN
CC
OUT
= +8 mA, V
+0.5
= –4 mA, V
5.0V ± 10%
5.0V ± 10%
= GND to V
5.0V ± 10%
= Max .,
= Max.,
= Min., I
= Max.
= Max., CE = V
= GND to V
V
V
V
IH
HC
LC
Test Conditions
V
CC
or V
Unit
IN
°C
V
V
IN
= –18 mA
CC
CC
CC
CC
= Min.
= Min.
V
HC
IH
,
Ind./Com’l.
Ind./Com’l.
2. Extended temperature operation guaranteed with 400 linear feet per
3. Transient inputs with V
4. This parameter is sampled and not 100% tested.
CAPACITANCES
V
Symbol
C
C
(2)
Symbol
T
T
P
I
OUT
CC
minute of air flow.
–100mA, respectively, are permissible for pulse widths up to 20 ns.
BIAS
STG
T
IN
OUT
Com’l.
Com’l.
= 5.0V, T
Mil.
Mil.
Mil.
Mil.
Input Capacitance
Output Capacitance
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
V
–0.5
–0.5
CC
___
___
Min
–10
___
___
A
2.2
–10
Parameter
2.4
–5
–5
Parameter
= 25°C, f = 1.0MHz
–0.2
P4C167
(3)
(3)
IL
V
V
(4)
and I
CC
CC
Max
–1.2
+10
0.8
0.2
+10
0.4
+5
30
20
15
10
+5
+0.5
+0.5
IL
not more negative than –3.0V and
V
–0.5(3)
Conditions
–0.5
CC
V
Min
___
___
___
___
2.2
n/a
V
2.4
n/a
–5
–5
OUT
–0.2
IN
P4C167L
(3)
–55 to +125
–65 to +150
= 0V
= 0V
Value
V
V
1.0
50
CC
CC
Max
–1.2
0.8
0.2
n/a
n/a
1.0
n/a
Page 2 of 10
0.4
n/a
+5
20
+5
+0.5
+0.5
Typ.
5
7
Unit
Unit
Unit
mA
mA
µA
µA
mA
pF
pF
V
V
V
V
V
°C
°C
W
V
V