P4C167 PYRAMID [Pyramid Semiconductor Corporation], P4C167 Datasheet - Page 4
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P4C167
Manufacturer Part Number
P4C167
Description
ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS
Manufacturer
PYRAMID [Pyramid Semiconductor Corporation]
Datasheet
1.P4C167.pdf
(10 pages)
TIMING WAVEFORM OF READ CYCLE NO. 2
Notes:
5. CE is LOW and WE is HIGH for READ cycle.
6. WE is HIGH, and address must be valid prior to or coincident with CE
AC CHARACTERISTICS—READ CYCLE
(V
TIMING WAVEFORM OF READ CYCLE NO. 1
Document # SRAM106 REV A
Symbol
t
t
t
t
t
t
t
t
RC
AA
AC
OH
LZ
HZ
PU
PD
transition LOW.
CC
= 5V ± 10%, All Temperature Ranges)
P4C167
Read Cycle Time
Address Access
Time
Chip Enable
Access Time
Output Hold from
Address Change
Chip Enable to
Output in Low Z
Chip Disable to
Output in High Z
Chip Enable to
Power Up Time
Chip Disable to
Power Down Time
Parameter
Min
10
2
2
0
–10
Max
10
10
10
5
(2)
Min
12
2
2
0
–12
Max
12
12
12
6
Min
15
2
2
0
–15
(6)
(5)
Max
15
15
15
8
7. Transition is measured ±200mV from steady state voltage prior to
8. Read Cycle Time is measured from the last valid address to the first
change with specified loading in Figure 1. This parameter is sampled
and not 100% tested.
transitioning address.
Min
20
2
2
0
–20
Max
20
20
10
20
Min
25
2
2
0
–25
Max
25
25
12
25
Min
35
2
2
0
–35
Max
35
35
17
35
Min
45
2
2
0
–45
Max
45
45
20
45
Page 4 of 10
Unit
ns
ns
ns
ns
ns
ns
ns
ns