HMC409LP4_10 HITTITE [Hittite Microwave Corporation], HMC409LP4_10 Datasheet - Page 5

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HMC409LP4_10

Manufacturer Part Number
HMC409LP4_10
Description
GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet
9 - 5
9
Absolute Maximum Ratings
Outline Drawing
Package Information
[1] max peak reflow temperature of 235 °C
[2] max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Collector Bias Voltage (Vcc1, Vcc2)
Control Voltage (Vpd)
rf input power (rfin)(Vs = Vpd = +5Vdc)
Junction Temperature
Continuous pdiss (T = 85 °C)
(derate 57.5 mw/°C above 85 °C)
Thermal resistance
(junction to ground paddle)
storage Temperature
operating Temperature
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
HmC409lp4e
part number
HmC409lp4
Phone: 978-250-3343
roHs-compliant low stress injection molded plastic
Application Support: Phone: 978-250-3343 or apps@hittite.com
low stress injection molded plastic
package Body material
v03.0710
+5.5 Vdc
+5.5 Vdc
+10 dBm
150 °C
3.74 w
17.4 °C/w
-65 to +150 °C
-40 to +85 °C
Fax: 978-250-3373
noTes:
1. leADfrAme mATeriAl: Copper AlloY
2. Dimensions Are in inCHes [millimeTers]
3. leAD spACinG TolerAnCe is non-CUmUlATiVe.
4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm.
5. pACKAGe wArp sHAll noT eXCeeD 0.05mm.
6. All GroUnD leADs AnD GroUnD pADDle mUsT Be
7. refer To HiTTiTe AppliCATion noTe for sUGGesTeD
pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm.
solDereD To pCB rf GroUnD.
lAnD pATTern.
POWER AMPLIFIER, 3.3 - 3.8 GHz
Typical Supply, Current vs. Supply
Voltage, Vcc1 = Vcc2 = Vpd
100% matte sn
sn/pb solder
lead finish
Order On-line at www.hittite.com
HMC409LP4
eleCTrosTATiC sensiTiVe DeViCe
oBserVe HAnDlinG preCAUTions
Vs (Vdc)
5.25
4.75
5.0
GaAs InGaP HBT 1 WATT
msl rating
msl3
msl3
[1]
[2]
/
409LP4E
package marking
icq (mA)
516
615
721
XXXX
XXXX
H409
H409
[3]

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