HMC475ST89_10 HITTITE [Hittite Microwave Corporation], HMC475ST89_10 Datasheet
HMC475ST89_10
Manufacturer Part Number
HMC475ST89_10
Description
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet
1.HMC475ST89_10.pdf
(6 pages)
8 - 74
8
Typical Applications
The HMC475ST89 / HMC475ST89E is an ideal RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF and RF Applications
Functional Diagram
Electrical Specifi cations,
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Application Support: Phone: 978-250-3343 or apps@hittite.com
Parameter
Vs= 8.0 V, Rbias= 9.1 Ohm, T
v02.0710
Fax: 978-250-3373
HMC475ST89
DC - 4.5 GHz
DC - 4.5 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 1.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 4.5 GHz
DC - 1.0 GHz
2.0 - 4.5 GHz
DC - 1.0 GHz
DC - 1.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 4.5 GHz
2.5 - 4.5 GHz
3.0 - 4.5 GHz
1.0 - 2.0 GHz
1.0 - 2.0 GHz
1.0 - 4.5 GHz
1.0 - 2.0 GHz
Features
P1dB Output Power: +22 dBm
Gain: 21.5 dB
Output IP3: +35 dBm
Cascadable 50 Ohm I/Os
Single Supply: +8V to +12V
Industry Standard SOT89 Package
The HMC475ST89(E) is a InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplifi er covering DC to 4.5 GHz. Packaged in an
industry standard SOT89, the amplifi er can be used
as a cascadable 50 Ohm RF/IF gain stage as well as
a LO or PA driver with up to +25 dBm output power.
The HMC475ST89(E) offers 21.5 dB of gain and +35
dBm output IP3 at 850 MHz while requiring only 110
mA from a single positive supply. The Darlington
topology results in reduced sensitivity to normal
process variations and excellent gain stability over
temperature while requiring a minimal number of
external bias components.
General Description
MMIC AMPLIFIER, DC - 4.5 GHz
Order On-line at www.hittite.com
A
= +25° C
InGaP HBT GAIN BLOCK
19.5
14.5
19.0
18.0
13.0
Min.
17.5
17.5
11.5
11.0
9
0.008
19.5
16.5
13.5
22.0
19.5
16.0
14.0
Typ.
21.5
21.0
110
3.5
3.8
12
14
14
13
25
35
30
11
10
/
475ST89E
0.012
Max.
135
dB/ °C
Units
dBm
dBm
dBm
dBm
dBm
dBm
dBm
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
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HMC475ST89_10 Summary of contents
Page 1
Typical Applications 8 The HMC475ST89 / HMC475ST89E is an ideal RF/IF gain block & driver: • Cellular / PCS / 3G • Fixed Wireless & WLAN • CATV, Cable Modem & DBS • Microwave Radio & Test ...
Page 2
Broadband Gain & Return Loss S21 0 S11 S22 -5 -10 -15 -20 -25 -30 -35 - FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 +25C +85C -40C ...
Page 3
P1dB vs. Temperature FREQUENCY (GHz) Output IP3 vs. Temperature FREQUENCY (GHz) For price, delivery and to place orders: ...
Page 4
Absolute Maximum Ratings Collector Bias Voltage (Vcc) +8.0 Vdc RF Input Power (RFIN)(Vcc = +7.2 Vdc) +17 dBm Junction Temperature 150 °C Continuous Pdiss ( °C) 1.09 W (derate 16.86 mW/°C above 85 °C) Thermal Resistance 59.3 ...
Page 5
Pin Descriptions 8 Pin Number Function OUT 2, 4 GND Application Circuit Recommended Bias Resistor Values for Icc= 110 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs 9.1 Ω BIAS ALUE R ...
Page 6
Evaluation PCB List of Materials for Evaluation PCB 116092 Item Description PCB Mount SMA Connector Pin C1, C2 Capacitor, 0402 Pkg. C3 100 pF Capacitor, 0402 Pkg. C4 1000 pF Capacitor, 0603 ...