K9F6408Q0C-B Samsung semiconductor, K9F6408Q0C-B Datasheet - Page 20

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K9F6408Q0C-B

Manufacturer Part Number
K9F6408Q0C-B
Description
8M x 8 Bit Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet
READ1 OPERATION
READ2 OPERATION
K9F6408Q0C
K9F6408U0C
CLE
CE
WE
ALE
RE
I/O
R/B
CLE
CE
WE
ALE
RE
I/O
R/B
0
0
~
~
7
7
00h or 01h A
50h
(INTERCEPTED BY CE)
(READ ONE PAGE)
M Address
Column
Address
0
~ A
A
0
7
~ A
A
A
0
4
7
A
~A
~A
9
~ A
3
7
Page(Row)
Address
A
: Valid Address
: Don
9
~ A
16
16
t
A
care
17
A
~ A
17
~ A
22
t
t
WB
WB
22
t
Busy
t
RR
R
t
AR2
20
On K9F6408U0C_T,Q or K9F6408U0C_V,F
CE must be held
low during tR
Dout N
t
R
Dout N+1
t
AR2
t
RC
On K9F6408U0C_T,Q or K9F6408U0C_V,F
CE must be held
low during tR
t
RR
Dout N+2
Selected
Row
511+M
Dout
FLASH MEMORY
Dout N+3
511+M+1
t
t
Dout
CHZ
OH
512
Dout 527
address M
Start
16

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