K9F6408Q0C-B Samsung semiconductor, K9F6408Q0C-B Datasheet - Page 9

• Manufacturer Part Number: K9F6408Q0C-B
• Description: 8M x 8 Bit Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F6408Q0C
K9F6408U0C
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins and -0.2V on Vcc and
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F6408X0C-XCB0:TA=0 to 70 C, K9F6408X0C-XIB0:TA=-40 to 85 C)
DC AND OPERATING CHARACTERISTICS
NOTE : V
Voltage on any pin relative to V
Temperature
Under Bias
Storage Temperature
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Operat-
Current
<20ns. Maximum DC voltage on input/output pins is V
Supply Voltage
Supply Voltage
Supply Voltage
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
ing
Parameter
IL
Parameter
can undershoot to -0.4V and V
Sequential Read
Program
Erase
K9F6408X0C-XCB0
K9F6408X0C-XIB0
Parameter
Symbol
Vcc
V
V
CC
SS
Q
SS
Symbol
I
OL
I
I
I
I
I
V
V
V
V
CC
CC
CC
SB
SB
I
(R/B)
I
LO
OH
LI
IH*
IL*
OL
1
2
3
1
2
IH
can overshoot to V
1.70
1.70
Min
0
CE=V
CE=V
CE=V
V
V
I/O pins
Except I/O pins
K9F6408Q0C :I
K9F6408U0C :I
K9F6408Q0C :I
K9F6408U0C :I
K9F6408Q0C :V
K9F6408U0C :V
tRC=50ns
IN
OUT
K9F6408Q0C(1.8V)
=0 to Vcc(max)
Test Conditions
=0 to Vcc(max)
CCQ
IL,
IH
CC
, WP=0V/V
I
-0.2, WP=0V/V
+0.3V which, during transitions, may overshoot to V
OUT
Typ.
1.8
1.8
0
=0mA
CC
-
-
-
OH
OL
OH
OL
+0.4V for durations of 20 ns or less.
OL
OL
=100uA
=2.1mA
Symbol
=-400 A
=-100 A
V
(Recommended operating conditions otherwise noted.)
=0.4V
CC
=0.1V
Vcc
T
T
IN/OUT
V
BIAS
STG
CC
9
Vcc
Q
CC
Max
1.95
1.95
Q
0
pins. During transitions, this level may undershoot to -2.0V for periods
Vcc
Vcc
V
K9F6408Q0C(1.8V)
K9F6408Q0C(1.8V)
CC
Min
-0.3
Q
Q
3
-
-
-
-
-
-
-
-
-0.4
-0.4
-0.1
-0.6 to + 2.45
-0.2 to + 2.45
-0.2 to + 2.45
Min
2.7
2.7
Typ
0
10
5
8
8
4
-
-
-
-
-
-
-
K9F6408U0C(3.3V)
Vcc
-10 to + 125
-40 to + 125
-65 to + 150
VCC
Max
+0.3
+0.3
0.4
0.1
10
15
15
50
1
10
10
-
-
Rating
Q
CC
FLASH MEMORY
Typ.
3.3
3.3
+2.0V for periods <20ns.
Min
-0.3
K9F6408U0C(3.3V)
0
2.0
2.0
2.4
8
-
-
-
-
-
-
-
-
K9F6408U0C(3.3V)
-0.6 to + 4.6
-0.6 to + 4.6
-0.6 to + 4.6
Typ
10
10
10
10
10
-
-
-
-
-
-
-
-
Max
3.6
3.6
Vcc
0
V
CC
Max
0.8
0.4
20
20
20
50
Q
1
10
10
-
-
+0.3
+0.3
Unit
Unit
V
V
V
V
V
V
Unit
C
C
mA
mA
V
A