PMBFJ109 PHILIPS [NXP Semiconductors], PMBFJ109 Datasheet
PMBFJ109
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PMBFJ109 Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Product specification File under Discrete Semiconductors, SC07 April 1995 ...
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... GSO V drain-drain voltage GDO I forward gate current G (DC) P total power dissipation tot T storage temperature stg T operating junction j temperature 2 Product specification PMBFJ108; PMBFJ109; PMBFJ110 MAM385 CONDITIONS MIN. MAX. UNIT 250 amb note 1 65 150 150 V ...
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... VALUE 500 PARAMETER Product specification PMBFJ108; PMBFJ109; PMBFJ110 UNIT K/W CONDITIONS MIN 0 0.1 V MAX. UNIT ...
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... 10 90 off SAMPLING SCOPE 50 90 MBK295 10% 4 Product specification PMBFJ108; PMBFJ109; PMBFJ110 TYP off Fig.3 Input and output waveforms. MAX. UNIT ...
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... VERSION IEC SOT23 April 1995 scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC EIAJ 5 Product specification PMBFJ108; PMBFJ109; PMBFJ110 detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION SOT23 ISSUE DATE 97-02-28 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 PMBFJ109; PMBFJ110 6 Product specification PMBFJ108; ...