SWC1N60A SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.], SWC1N60A Datasheet

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SWC1N60A

Manufacturer Part Number
SWC1N60A
Description
N-channel MOSFET
Manufacturer
SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Datasheet
1.SWC1N60A.pdf (7 pages)
Mar. 2011. Rev. 2.0
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics. This power MOSFET is usually used
at AC adaptors and SMPS.
Absolute maximum ratings
Thermal characteristics
Features
■ High ruggedness
■ R
■ Gate Charge (Max 6nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
Order Codes
SAMWIN
Item
T
Symbol
Symbol
DS(ON)
1
STG
dv/dt
R
V
R
V
E
E
I
P
T
I
thCS
DSS
DM
thjA
GS
AR
D
AS
D
L
, T
(Max 15 Ω)@V
J
Drain to Source Voltage
Continuous Drain Current (@T
Continuous Drain Current (@T
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
Derating Factor above 25
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Thermal resistance, Junction to Lead Max
Thermal resistance, Junction to ambient
SW C 1N60A
Sales Type
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
GS
=10V
Parameter
Parameter
o
C
C
=25
C
C
1. Gate 2. Drain 3. Source
=25
=100
o
C)
o
SW1N60A
C)
1
o
Marking
C)
2
3
TO-92
(note 1)
(note 2)
(note 3)
(note 1)
Package
TO-92
N-channel MOSFET
-55 ~ + 150
Value
0.023
Value
± 30
600
260
120
0.5
0.3
2.0
0.3
4.5
52
40
BV
I
R
3
SW1N60A
D
DS(ON)
1
DSS
: 0.5A
: 600V
: 15ohm
Packaging
2
3
TAPE
W/
o
o
V/ns
Unit
Unit
mJ
mJ
C/W
C/W
o
o
W
V
A
A
A
V
C
C
o
1/7
C

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SWC1N60A Summary of contents

Page 1

SAMWIN Features ■ High ruggedness (Max 15 Ω)@V ■ R =10V DS(ON) GS ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This ...

Page 2

SAMWIN Electrical characteristic ( Symbol Parameter Off characteristics BV Drain to source breakdown voltage DSS I Drain to source leakage current DSS Gate to source leakage current, forward I GSS Gate to source leakage current, reverse ...

Page 3

SAMWIN Fig. 1. On-state characteristics V GS Top : 15.0 V 10.0 V 8 6.5 V 6.0 V Bottom : 5 Drain-Source Voltage [V] ...

Page 4

SAMWIN Fig 7. Breakdown Voltage Variation vs. Junction Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Fig. 9. Maximum drain current vs. case temperature. 1.00 0.75 0.50 0.25 0. ...

Page 5

SAMWIN Fig. 12. Gate charge test circuit & waveform Same type as DUT V GS 1mA Fig. 13. Switching time test circuit & waveform 10V IN Fig. 14. Unclamped Inductive switching test circuit & waveform I ...

Page 6

SAMWIN Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT Same type 10V GS as DUT *. dv/dt controlled controlled by pulse period Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All ...

Page 7

SAMWIN REVISION HISTORY Revision No. Changed Characteristics REV 1.0 Origination, First Release Updated the format of datasheet and added REV 2.0 Order Codes. WWW.SEMIPOWER.COM.CN 西安芯派电子科技有限公司 地址：西安市高新区高新一路25号创新大厦MF6 电话：029 - 88253717 传真：029 - 88251977 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights ...

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