SWC1N60A SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.], SWC1N60A Datasheet - Page 4

• Manufacturer Part Number: SWC1N60A
• Description: N-channel MOSFET
• Manufacturer: SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Fig. 11. Transient thermal response curve
SAMWIN
Fig 7. Breakdown Voltage Variation
1.00
0.75
0.50
0.25
0.00
1.2
1.1
1.0
0.9
0.8
-100
25
Fig. 9. Maximum drain current vs.
vs. Junction Temperature
-50
case temperature.
50
10
10
10
10
T
J
-1
-2
, Junction Temperature [
1
0
10
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
T
0
-5
C'
Case Temperature [
0.01
D=0.5
0.02
0.05
75
0.2
0.1
50
10
100
-4
100
t
1
single pulse
, Square Wave Pulse Duration [sec]
o
C]
o
،‫ ط‬Notes :
C]
1. V
2. I
125
D
GS
150
10
= 250 ¥‫ى‬A
= 0 V
-3
200
150
10
-2
Fig. 10. Maximum safe operating area
Fig. 8. On resistance variation
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
10
-100
-1
-2
1
0
10
،‫ ط‬Notes :
-1
vs. junction temperature
0
،‫ ط‬Notes :
1. Z
2. Duty Factor, D=t
3. T
Operation in This Area
is Limited by R
1. T
2. T
3. Single Pulse
C
J
¥ è JC
JM
= 150
= 25
- T
(t) = 4.2 ،‫/ة‬W Max.
-50
o
C
o
C
C
DS(on)
= P
10
DM
T
0
V
J
, Junction Temperature [
DS
* Z
10
0
, Drain-Source Voltage [V]
1
¥ è JC
1
/t
2
(t)
10
50
1
SW1N60A
100
10
o
DC
2
C]
10 ms
،‫ ط‬Notes :
1. V
2. I
1 ms
150
D
GS
= 0.5 A
100
= 10 V

s
200
10
3
4/7