BAR63V-03-GS18 VISHAY [Vishay Siliconix], BAR63V-03-GS18 Datasheet

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BAR63V-03-GS18

Manufacturer Part Number
BAR63V-03-GS18
Description
RF PIN Diode - Single in SOT-23
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
RF PIN Diode - Single in SOT-23
Description
Characterized by a very low reverse Capacitance the
PIN Diode BAR63V-03 was designed for RF signal
tuning. As a function of the forward bias current the
forward resistance (rf) can be adjusted to less than
1 Ω while the low reverse capacitance offers a high
isolation. Typical applications for this PIN Diodes are
wireless, mobile and TV-systems.
Features
Applications
For frequency up to 3 GHz
RF-signal tuning
Mobile, wireless and TV-Applications
Parts Table
Absolute Maximum Ratings
T
Electrical Characteristics
T
Document Number 85749
Rev. 1.4, 15-Apr-05
• Low forward resistance
• Very small reverse capacitance
• Lead (Pb)-free component
• Component in accordance to
BAR63V-03
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Reverse voltage
Reverse current
Forward voltage
Diode capacitance
amb
amb
RoHS 2002/95/EC and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Part
Parameter
Parameter
BAR63V-03-GS18 or BAR63V-03-GS08
I
V
I
f = 1 MHz, V
f = 1 MHz, V
R
F
R
= 100 mA
= 10 µA
= 35 V
Test condition
Test condition
R
R
Ordering code
= 0
= 5 V
e3
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.1 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Symbol
V
C
C
V
I
R
R
F
D
D
Symbol
3
T
V
I
T
stg
F
R
j
C3
2
Min
50
Marking
1
- 55 to + 150
Vishay Semiconductors
Value
0.28
0.23
Typ.
100
150
50
1
BAR63V-03
3
Tape and Reel
Max
1.2
0.3
2
10
Remarks
18255
www.vishay.com
Unit
mA
°C
°C
V
Unit
nA
pF
pF
V
V
1

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BAR63V-03-GS18 Summary of contents

Page 1

... Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications For frequency GHz RF-signal tuning Mobile, wireless and TV-Applications Parts Table Part BAR63V-03 BAR63V-03-GS18 or BAR63V-03-GS08 Absolute Maximum Ratings °C, unless otherwise specified amb Parameter Reverse voltage Forward current Junction temperature ...

Page 2

... BAR63V-03 Vishay Semiconductors Parameter Forward resistance f = 100 MHz 100 MHz 100 MHz, I Charge carrier life time mA Typical Characteristics (Tamb = 25 °C unless otherwise specified) Figure 1. Forward Resistance vs. Forward Current 0. MHz 0.25 0.20 0.15 0.10 0.05 0. Reverse V oltage (V) 18333 R Figure 2. Diode Capacitance vs. Reverse Voltage www ...

Page 3

... Figure 5. Typical Charge Recovery Curve Package Dimensions in mm (Inches) 0.1 (.004) max. 0.4 (.016) 0.4 (.016) 3.1 (.122) 2.8 (.110) 0.4 (.016 0.95 (.037) 0.95 (.037) Document Number 85749 Rev. 1.4, 15-Apr-05 200 0.175 (.007) 0.098 (.005) 2.6 (.102) 2.35 (.092) 0.52 (0.020) 2.0 (0.079) 0.95 (0.037) BAR63V-03 Vishay Semiconductors ISO Method E 0.9 (0.035) 0.95 (0.037) 17418 www.vishay.com 3 ...

Page 4

... BAR63V-03 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

Page 5

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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