Q67060-S6185 INFINEON [Infineon Technologies AG], Q67060-S6185 Datasheet
Q67060-S6185
Related parts for Q67060-S6185
Q67060-S6185 Summary of contents
Page 1
... Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.0 Product Summary DS(on),max I D P-TO263-3-2 P-TO262-3 Ordering Code Marking Q67060-S6185 1N0608 T =25 ° Q67060-S6187 1N0608 T =100 ° Q67060-S6186 1N0608 Symbol Conditions I T =25 °C, V ...
Page 2
Parameter 2) Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current ...
Page 3
Parameter 2) Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage 2) Reverse ...
Page 4
Power dissipation P =f(T ) tot C 350 300 250 200 150 100 100 T [° Safe operating area I =f =25 ° parameter ...
Page 5
Typ. output characteristics I =f =25 ° parameter 160 8 V 140 120 100 Typ. transfer characteristics I ...
Page 6
Typical Drain-source on-state resistance =10 V DS(on -60 - [° Typ. capacitances C =f(V ); ...
Page 7
Typ. Avalanche characteristics parameter: T j(start) 100 150 ° [µ Typ. gate charge V =f =80 A pulsed GS gate D parameter: ...
Page 8
Published by Infineon Technologies AG St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and ...