BCP55-16 T/R Philips, BCP55-16 T/R Datasheet - Page 10

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BCP55-16 T/R

Manufacturer Part Number
BCP55-16 T/R
Description
npn, transistor, sot, Semiconductors and Actives, Transistors, Discretes (diodes, transistors, thyristors ...)
Manufacturer
Philips
Datasheet
Philips Semiconductors
7. Characteristics
Table 8:
T
9397 750 14041
Product data sheet
Symbol
I
I
h
V
V
C
f
CBO
EBO
T
amb
FE
CEsat
BE
c
= 25 C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
DC current gain
collector-emitter
saturation voltage
base-emitter voltage
collector capacitance
transition frequency
h
h
FE
FE
selection -10
selection -16
Conditions
I
I
T
I
V
V
I
I
I
f = 1 MHz
I
f = 100 MHz
E
E
C
C
C
E
C
j
CE
CE
= 0 A; V
= 0 A; V
= 150 C
I
I
I
I
I
= i
= 0 A; V
= 500 mA; I
= 500 mA; V
= 50 mA; V
C
C
C
C
C
= 2 V
= 2 V
= 5 mA
= 150 mA
= 500 mA
= 150 mA
= 150 mA
e
= 0 A; V
Rev. 06 — 18 February 2005
CB
CB
EB
= 30 V
= 30 V;
= 5 V
CE
B
CB
CE
= 50 mA
= 5 V;
= 10 V;
= 2 V
BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistor
Min
-
-
-
63
63
40
63
100
-
-
-
100
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Typ
-
-
-
-
-
-
-
-
-
-
6
180
Max
100
10
100
-
250
-
160
250
500
1
-
-
Unit
nA
nA
mV
V
pF
MHz
10 of 17
A

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