MCF51JF32VHS Freescale Semiconductor, MCF51JF32VHS Datasheet - Page 30

• Manufacturer Part Number: MCF51JF32VHS
• Description: 32-bit Microcontrollers - MCU COLDFIREV1 32kFLASH
• Manufacturer: Freescale Semiconductor

Specifications of MCF51JF32VHS

• Rohs: yes
• Core: ColdFire V1
• Processor Series: MCF51JF128
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 50 MHz
• Program Memory Size: 32 KB
• On-chip Adc: Yes
• Operating Supply Voltage: 1.71 V to 3.6 V
• Operating Temperature Range: - 40 C to + 105 C
• Package / Case: QFN-44
• Mounting Style: SMD/SMT

Memories and memory interfaces
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
2. Data retention is based on T
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ T
4. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the
FTFL to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that can
be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_FlexRAM =
where
30
n
n
n
n
n
nvmwree128
nvmwree512
Symbol
nvmwree16
nvmwree4k
nvmwree8k
• Writes_FlexRAM — minimum number of writes to each FlexRAM location
• EEPROM — allocated FlexNVM based on DEPART; entered with Program
• EEESIZE — allocated FlexRAM based on DEPART; entered with Program Partition
• Write_efficiency —
25°C use profile. Engineering Bulletin EB618 does not apply to this technology.
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup. Minimum and typical values
assume all byte-writes to FlexRAM.
Partition command
command
Write endurance
Description
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio = 8192
Table 19. NVM reliability specifications (continued)
EEPROM – 2 × EEESIZE
javg
= 55°C (temperature profile over the lifetime of the application).
EEESIZE
MCF51JF128 Data Sheet, Rev. 6, 01/2012.
× Write_efficiency × n
1.27 M
315 K
10 M
20 M
35 K
Min.
100 M
175 K
1.6 M
6.4 M
Typ.
50 M
j
≤ 125°C.
1
nvmcycd
Max.
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Freescale Semiconductor, Inc.
writes
writes
writes
writes
writes
Unit
Notes
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