MPXN2120VMG116 Freescale Semiconductor, MPXN2120VMG116 Datasheet - Page 32

• Manufacturer Part Number: MPXN2120VMG116
• Description: Microprocessors - MPU 32BIT2M NVM GATEWAY
• Manufacturer: Freescale Semiconductor

Specifications of MPXN2120VMG116

• Rohs: yes
• Processor Series: PXN21
• Core: e200
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 60 MHz
• Program Memory Size: 2 MB
• Data Ram Size: 32 KB
• Interface Type: CAN, I2C, SPI, UART
• Operating Supply Voltage: - 0.3 V to + 1.32 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MAPBGA-208
• Number Of Programmable I/os: 155

2
3
4
5
6
7
8
9
10
11
Electrical characteristics
4.6
32
Equations I
V
between the power segments. V
analog signal level may be clamped to the V
V
When V
pads remain in the disabled default state with their output buffers, input buffers, and pull devices disabled.
The pad type is indicated by one or more of the following abbreviations: A–analog, F—fast speed, H–high voltage, I—input-only,
M–medium speed, S–slow speed. For example, pad type SH designates a slow high-voltage pad.
The IHA pads are related to V
Characterization Based Capability:
IOH_F = {12, 20, 30, 40} mA and IOL_F = {24, 40, 50, 65} mA for {00, 01,10, 11} drive mode with V
IOH_F = {7, 13, 18, 25} mA and IOL_F = {18, 30, 35, 50} mA for {00, 01, 10, 11} drive mode with V
IOH_F = {3, 7, 10, 15} mA and IOL_F = {12, 20, 27, 35} mA for {00, 01, 10, 11} drive mode with V
Characterization Based Capability:
IOH_S = {6, 11.6} mA and IOL_S = {9.2, 17.7} mA for {slow, medium} I/O with V
IOH_S = {2.8, 5.4} mA and IOL_S = {4.2, 8.1} mA for {slow, medium} I/O with V
All V
Absolute value of current, measured at V
Weak pull up/down inactive. Measured at V
only when power supplies are within specified operating conditions.
Maximum leakage occurs at maximum operating temperature. Leakage current decreases by approximately one-half for each
8 to 12
Spec
DDE1
DDA
1
2
3
4
OL
.
– V
/V
o
RCSEL
C, in the ambient temperature range of 50 to 125
OH
Operating current specifications
V
V
V
V
DDE4
I
TOTAL
DDE
DDE
DDA
RH
DD33
values 100% tested with ±2 mA load.
V
V
Static
Dynamic
V
Run mode
Sleep mode
– Optional 32 kHz osc enabled
V
Run mode
Sleep mode
V
Run mode
Sleep mode
DDE(1,2,3,4)
DDEMLB
DDA
RH
DD33
= V
Current
= I
are separate power segments and may be powered independently with no differential voltage constraints
Current
Current
Current
= I
@ 3.0 V – 5.5 V
DDA
DDE1
2
@ 3.0 V – 5.5 V
@ 3.0 V – 3.6 V
DDE
3
(high), the internally generated V
@ 2.375 V – 3.6 V
+ I
+ I
@ 3.0 V – 5.5 V
DDE2
DDA
DDA
+ I
+ I
DDE1
.
RH
DDE3
Characteristic
+ I
– V
PXN20 Microcontroller Data Sheet, Rev. 1
DD33
+ I
IL
DDE3
DDE4
DDE
and V
DDE
Table 10. Operating currents
+ I
pad power segments contain ADC analog input channels and thus the input
= 5.25 V. Applies to pad types: SH and MH. Leakage specification guaranteed
DDSYN
+ I
level, resulting in inaccurate ADC results if the V
IH
DDEMLB
.
+ I
DD33
RC
o
C. Applies to pad types: pad_a and pad_ae.
+ I
voltage may be used to power V
DD
Symbol
DDEH
I
DDEH
I
I
DD33
DDE
DDA
I
RH
—
= 3.0 V
= 4.5 V;
Ambient
Note 3
25 C
Typ
300
20
+5
10
10
—
0
1
1
DDEMLB
1
DDE
DDE
DDE
Freescale Semiconductor
DDE
–40–150 C
voltage level is less than
as long as the PK[0:2]
Junction
= 1.62 V.
= 2.25 V;
Max
= 3.0 V;
+15
700
30
25
30
50
30
20
20
—
1
Unit
mA
mA
mA
A
A
A
A
A
A
—