CAT25320HU3I-GT3 ON Semiconductor, CAT25320HU3I-GT3 Datasheet - Page 2

• Manufacturer Part Number: CAT25320HU3I-GT3
• Description: EEPROM 32KB SPI SER CMOS EEPROM
• Manufacturer: ON Semiconductor

Specifications of CAT25320HU3I-GT3

• Product Category: EEPROM
• Rohs: yes
• Memory Size: 32 Kbit
• Organization: 4096 x 8
• Data Retention: 100 yr
• Maximum Clock Frequency: 10 MHz
• Maximum Operating Current: 2 mA
• Operating Supply Voltage: 1.8 V to 5.5 V
• Maximum Operating Temperature: + 130 C
• Mounting Style: SMD/SMT
• Package / Case: UDFN-8
• Interface Type: SPI
• Minimum Operating Temperature: - 45 C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
3. Page Mode, V
Table 1. ABSOLUTE MAXIMUM RATINGS
Table 2. RELIABILITY CHARACTERISTICS
Table 3. D.C. OPERATING CHARACTERISTICS
(
Table 4. PIN CAPACITANCE
Symbol
V
Operating Temperature
Storage Temperature
Voltage on any Pin with Respect to Ground (Note 1)
N
Symbol
C
undershoot to no less than −1.5 V or overshoot to no more than V
and JEDEC test methods.
CC
END
V
V
I
V
V
I
I
I
C
CCW
CCR
V
SB1
SB2
I
V
OUT
Symbol
OH1
OH2
OL1
OL2
I
LO
IN
L
IH
IL
= 1.8 V to 5.5 V, T
T
(Note 3)
DR
Supply Current
(Read Mode)
Supply Current
(Write Mode)
Standby Current
Standby Current
Input Leakage Current
Output Leakage
Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
Output Capacitance (SO)
Input Capacitance (CS, SCK, SI, WP, HOLD)
CC
Parameter
Endurance
Data Retention
= 5 V, 25°C.
A
= −40°C to +85°C and V
(Note 2) (T
Read, V
SO open
Write, V
SO open
V
WP = V
V
WP = GND, V
V
CS = V
V
V
V
V
V
Test
IN
IN
IN
OUT
CC
CC
CC
CC
= GND or V
= GND or V
= GND or V
Parameter
Parameters
≥ 2.5 V, I
≥ 2.5 V, I
< 2.5 V, I
< 2.5 V, I
A
= GND or V
CC
= 25°C, f = 1.0 MHz, V
CC
CC
CC
,
, V
CC
= 5.5 V,
= 5.5 V,
(Note 2)
CC
OL
OH
OL
OH
CC
= 2.5 V to 5.5 V, T
CC
CC
CC
= 5.5 V
= 3.0 mA
= 150 mA
= −1.6 mA
= −100 mA
= 5.5 V
CC
, CS = V
, CS = V
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Test Conditions
CC
CC
2
CC
,
,
CC
A
+ 1.5 V, for periods of less than 20 ns.
= +5.0 V)
= −40°C to +125°C, unless otherwise specified.)
10 MHz / −40°C to 85°C
5 MHz / −40°C to 125°C
10 MHz / −40°C to 85°C
5 MHz / −40°C to 125°C
T
T
T
T
T
T
A
A
A
A
A
A
= −40°C to +85°C
= −40°C to +125°C
= −40°C to +85°C
= −40°C to +125°C
= −40°C to +85°C
= −40°C to +125°C
Conditions
V
V
OUT
IN
CC
= 0 V
= 0 V
+ 0.5 V. During transitions, the voltage on any pin may
1,000,000
Min
100
Min
V
V
CC
CC
0.7 V
−0.5
Min
−2
−1
−1
− 0.8 V
− 0.2 V
Typ
Program / Erase Cycles
−45 to +130
−65 to +150
−0.5 to +6.5
CC
Ratings
Units
Years
V
Max
0.3 V
CC
8
8
Max
0.4
0.2
2
2
2
3
1
2
3
5
2
1
2
+ 0.5
CC
Units
Units
Units
pF
pF
°C
°C
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V