VND830PTR-E STMicroelectronics, VND830PTR-E Datasheet - Page 17

• Manufacturer Part Number: VND830PTR-E
• Description: Power Switch ICs - Power Distribution Double Ch High Side 36V VCC 65mOhm 9.5A
• Manufacturer: STMicroelectronics

Specifications of VND830PTR-E

• Product Category: Power Switch ICs - Power Distribution
• Rohs: yes
• Operating Supply Voltage: 5.5 V to 36 V

VND830P-E
3.1.2
3.2
3.3
Please note that, if the microprocessor ground is not common with the device ground, then
the R
values. This shift varies depending on how many devices are ON in the case of several high-
side drivers sharing the same R
If the calculated power dissipation requires the use of a large resistor, or several devices
have to share the same resistor, then ST suggests using
Solution 2: a diode (D
A resistor (R
inductive load. This small signal diode can be safely shared amongst several different HSD.
Also in this case, the presence of the ground network produce a shift (~600 mV) in the input
threshold and the status output values if the microprocessor ground is not common with the
device ground. This shift does not vary if more than one HSD shares the same
diode/resistor network. Series resistor in INPUT and STATUS lines are also required to
prevent that, during battery voltage transient, the current exceeds the absolute maximum
rating. Safest configuration for unused INPUT and STATUS pin is to leave them
unconnected.
Load dump protection
D
V
V
MCU I/O protection
If a ground protection network is used and negative transients are present on the V
the control pins are pulled negative. ST suggests to insert a resistor (R
the microcontroller I/O pins from latching up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os:
Example
For the following conditions:
The recommended values are:
CC
CC
ld
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
maximum DC rating. The same applies if the device is subjected to transients on the
line that are greater than those shown in
-V
V
I
V
5 kΩ ≤ R
R
GND
latchup
CCpeak
OHμC
prot
CCpeak
produces a shift (I
= 10 kΩ
≥ 20 mA
≥ 4.5 V
GND
= -100 V
prot
/ I
latchup
= 1 kΩ) should be inserted in parallel to D
≤ 65 kΩ.
≤ R
prot
S(on)max
GND
≤ (V
Doc ID 17546 Rev 2
GND
) in the ground line
OHμC
.
* R
- V
GND
IH
) in the input thresholds and the status output
- V
Table
GND
) / I
13.
IHmax
Section 3.1.2
GND
if the device is driving an
Application information
prot
described below.
) in line to prevent
CC
line,
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