NCP337FCT2G ON Semiconductor, NCP337FCT2G Datasheet - Page 8

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NCP337FCT2G

Manufacturer Part Number
NCP337FCT2G
Description
Power Switch ICs - Power Distribution
Manufacturer
ON Semiconductor
Datasheet

Specifications of NCP337FCT2G

On Resistance (max)
120 mOhms
On Time (max)
1130 us
Operating Supply Voltage
1.2 V to 5.5 V
Supply Current (max)
3 A
Mounting Style
SMD/SMT
Package / Case
WLCSP-6
Maximum Power Dissipation
0.66 W

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NCP337FCT2G
Manufacturer:
ON Semiconductor
Quantity:
1 900
Company:
Part Number:
NCP337FCT2G
Quantity:
2 300
Power Dissipation
power dissipation of the power MOSFET. Assuming this,
the power dissipation and the junction temperature in
normal mode can be calculated with the following
equations:
Example of application definition.
Taking into account of R
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Main contributor in term of junction temperature is the
P
R
I
T
T
R
R
I: load DC current.
T
P
1 oz, 2 layers: 100°C/W.
OUT
NCP337FCT2G
NCP336FCT2G
D
A
J
J
D
DS(on)
q
DS(on)
: junction temperature.
: ambient temperature.
* T
= Thermal resistance between IC and air, through PCB.
= Power dissipation (W)
= R
Device
= Output current (A)
A
DS(on)
: intrinsic resistance of the IC Mosfet.
= Power MOSFET on resistance (W)
+ R
qJA
x (I
OUT
Figure 14. Routing Example: 2 oz, 4 layers with vias across 2 internal inners.
P
Marking
)
D
2
q
+ R
AC
AF
obtain with:
qJA
R
Without Autodischarge
DS(on)
Auto discharge
APPLICATION INFORMATION
Option
I
2
http://onsemi.com
8
PCB Recommendations
the PCB design rules must be respected to properly evacuate
the heat out of the silicon. By increasing PCB area,
especially around IN and OUT pins, the R
can be decreased, allowing higher power dissipation.
At 3 A, 25°C ambient temperature, R
5 V, the junction temperature will be:
T
Taking into account of R
At 3 A, 65°C ambient temperature, R
5 V, the junction temperature will be:
T
J
J
T
R
T
The NCP337 integrates an up to 3 A rated PMOS FET, and
T
2 oz, 4 layers: 60°C/W.
+ T
+ T
A
J
WLCSP 1 x 1.5 mm
WLCSP 1 x 1.5 mm
qJA
J
= Junction temperature (°C)
= P
= Ambient temperature (°C)
A
A
= Package thermal resistance (°C/W)
Package
D
) R
) R
x R
q
q
qJA
P
P
+ T
D
D
+ 25 ) (0.024
+ 65 ) (0.024
A
q
obtain with:
3000 Tape / Reel
3000 Tape / Reel
DS(on)
DS(on)
Shipping
3
3
2
2
qJA
)
)
20 mW @ Vin
24 mW @ Vin
of the package
100 + 43
60 + 78
o
C
o
C

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