MCIMX6D6AVT10AC Freescale Semiconductor, MCIMX6D6AVT10AC Datasheet - Page 36

• Manufacturer Part Number: MCIMX6D6AVT10AC
• Description: Processors - Application Specialized i.MX6D
• Manufacturer: Freescale Semiconductor
• Type: Multimedia Applicationsr

Specifications of MCIMX6D6AVT10AC

• Rohs: yes
• Core: ARM Cortex A9
• Processor Series: i.MX6
• Data Bus Width: 32 bit
• Operating Supply Voltage: 1.05 V to 1.5 V
• Memory Type: L1/L2 Cache, ROM, SRAM

Electrical Characteristics
4.6
This section includes the DC parameters of the following I/O types:
36
Bias resistor
Parameter
•
•
•
•
Cload
ESR
General Purpose I/O (GPIO)
Double Data Rate I/O (DDR) for LPDDR2 and DDR3/DDR3L modes
LVDS I/O
MLB I/O
I/O DC Parameters
Min
The term ‘OVDD’ in this section refers to the associated supply rail of an
input or output.
—
—
—
i.MX 6Dual/6Quad Automotive and Infotainment Applications Processors, Rev. 2
14 M
50 k
10 pF
or
1
0
Typ
Figure 3. Circuit for Parameters Voh and Vol for I/O Cells
Table 21. OSC32K Main Characteristics (continued)
100 k Equivalent series resistance of the crystal. Choosing a crystal with a higher value
Max
pdat
—
—
This the integrated bias resistor that sets the amplifier into a high gain state. Any
leakage through the ESD network, external board leakage, or even a scope probe
that is significant relative to this value will debias the amplifier. The debiasing will
result in low gain, and will impact the circuit's ability to start up and maintain
oscillations.
Usually crystals can be purchased tuned for different Cloads. This Cload value is
typically 1/2 of the capacitances realized on the PCB on either side of the quartz.
A higher Cload will decrease oscillation margin, but increases current oscillating
through the crystal.
will decrease the oscillating margin.
Predriver
Target Crystal Properties
NOTE
pmos (Rpu)
nmos (Rpd)
ovdd
ovss
pad
Comments
Voh min
Vol max
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