5962-8855201XA IDT, 5962-8855201XA Datasheet - Page 8

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5962-8855201XA

Manufacturer Part Number
5962-8855201XA
Description
SRAM
Manufacturer
IDT
Datasheet

Specifications of 5962-8855201XA

Memory Size
256 KB
Organization
32 K x 8
Access Time
20 ns
Supply Voltage - Max
5.5 V
Supply Voltage - Min
4.5 V
Maximum Operating Current
150 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
CDIP-28
Memory Type
CMOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
5962-8855201XA
Quantity:
33
Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)
NOTES:
1. A write occurs during the overlap of a LOW CS and a LOW WE.
2. t
3. During this period, I/O pins are in the output state so that the input signals must not be applied.
4. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state.
5. Transition is measured ±200mV from steady state.
6. If OE is LOW during a WE controlled write cycle, the write pulse width must be the larger of t
Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)
ADDRESS
ADDRESS
IDT71256S/L
CMOS Static RAM 256K (32K x 8-Bit)
DATA
DATA
on the bus for the required t
as the specified t
WR
DATA
is measured from the earlier of CS or WE going HIGH to the end of the write cycle.
CS
WE
OUT
WE
OE
IN
CS
IN
WP
. For a CS controlled write cycle, OE may be LOW with no degradation to t
DW
. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse width can be as short
t
t
AS
AS
(3)
t
WZ
(5)
t
t
AW
AW
t
WP
t
t
CW
WC
t
(6)
WC
(6)
8
Military, Commercial, and Industrial Temperature Ranges
WP
t
DW
t
or (t
DW
CW
WHZ
.
+t
DW
) to allow the I/O drivers to turn off and data to be placed
t
DH
t
WR
t
t
WR
t
OW
t
DH2
(1,2,4)
(1,2,4,6)
t
OHZ
(5)
(3)
2946 drw 10
2946 drw 11

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