AS7C1024B-12TJIN Alliance Memory, AS7C1024B-12TJIN Datasheet - Page 5

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AS7C1024B-12TJIN

Manufacturer Part Number
AS7C1024B-12TJIN
Description
SRAM 1M, 5V, 12ns FAST 128K x 8 Asynch SRAM
Manufacturer
Alliance Memory
Datasheet

Specifications of AS7C1024B-12TJIN

Rohs
yes
Memory Size
1 Mbit
Organization
128 Kbit x 8
Access Time
12 ns
Supply Voltage - Max
5.5 V
Supply Voltage - Min
4.5 V
Maximum Operating Current
100 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
SOJ-32
Memory Type
CMOS
Factory Pack Quantity
22
Write waveform 1 (WE controlled)
Write cycle (over the operating range)
Write cycle time
Chip enable (CE1) to write end
Chip enable (CE2) to write end
Address setup to write end
Address setup time
Write pulse width
Write recovery time
Address hold from end of write
Data valid to write end
Data hold time
Write enable to output in high Z
Output active from write end
Address
3/26/04, v 1.2
D
OUT
WE
D
IN
Parameter
t
AS
Symbol
t
t
t
t
t
t
t
t
t
t
t
CW1
CW2
t
WC
AW
WR
DW
WZ
OW
WP
AH
DH
AS
10,11,12
t
WZ
Alliance Memory Inc.
Min Max Min
10
11, 12
8
8
8
0
7
0
0
5
0
1
-
t
AW
-10
t
WC
5
-
-
-
-
-
-
-
t
WP
12
9
9
9
0
8
0
0
6
0
1
t
Data valid
-12
DW
®
Max
6
Min Max Min Max
15
10
10
10
t
0
9
0
0
8
0
1
OW
-15
t
t
t
WR
7
AH
DH
20
12
12
12
12
10
0
0
0
0
2
-20
8
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AS7C1024B
P. 5 of 9
Notes
4, 5
4, 5
4, 5
12
12
12

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