CY7C1021DV33-10ZSXAT Cypress Semiconductor, CY7C1021DV33-10ZSXAT Datasheet - Page 7

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CY7C1021DV33-10ZSXAT

Manufacturer Part Number
CY7C1021DV33-10ZSXAT
Description
SRAM 1-Mbit 64k x16 Static RAM
Manufacturer
Cypress Semiconductor
Datasheet

Specifications of CY7C1021DV33-10ZSXAT

Rohs
yes
Memory Size
1 Mbit
Organization
64 K x 16
Access Time
10 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
3 V
Maximum Operating Current
60 mA
Mounting Style
SMD/SMT
Package / Case
TSOP-44
Memory Type
Asynchronous CMOS
Factory Pack Quantity
1000
Switching Waveforms
Write Cycle No. 1 (CE Controlled)
Write Cycle No. 2 (BLE or BHE Controlled)
Document #: 38-05460 Rev. *G
Notes
15. Data I/O is high impedance if OE or BHE and/or BLE = V
16. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
ADDRESS
ADDRESS
BHE, BLE
BHE, BLE
DATA I/O
DATA I/O
WE
WE
CE
CE
(continued)
t
SA
t
SA
[15, 16]
IH
.
t
AW
t
AW
t
WC
t
WC
t
t
BW
t
PWE
t
SCE
SCE
t
PWE
t
BW
DATA IN VALID
DATA IN VALID
t
SD
t
SD
t
HD
t
HD
t
HA
t
HA
CY7C1021DV33
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