MT48LC16M16A2TG-7E IT:D TR Micron Technology Inc, MT48LC16M16A2TG-7E IT:D TR Datasheet - Page 76

• Manufacturer Part Number: MT48LC16M16A2TG-7E IT:D TR
• Description: IC SDRAM 256MBIT 133MHZ 54TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT48LC16M16A2TG-7E IT:D TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1064-2

Figure 45: WRITE With Auto Precharge Interrupted by a READ
Figure 46: WRITE With Auto Precharge Interrupted by a WRITE
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Internal
States
Internal
States
Command
Command
Note:
Note:
Address
Address
Bank m
Bank m
Bank n
Bank n
CLK
CLK
DQ
DQ
1. DQM is LOW.
1. DQM is LOW.
Page active
Page active
NOP
T0
T0
NOP
WRITE - AP
WRITE - AP
Page active
Bank n,
Page active
Bank n,
Bank n
Bank n
Col a
T1
D
T1
Col a
D
IN
IN
WRITE with burst of 4
WRITE with burst of 4
T2
T2
NOP
D
NOP
D
IN
IN
76
READ - AP
Bank m,
T3
T3
Col d
Bank m
D
NOP
IN
Interrupt burst, write-back
t
WR - bank n
READ with burst of 4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE - AP
Bank m,
Col d
T4
Bank m
T4
D
NOP
CL = 3 (bank m)
t
Interrupt burst, write-back
WR - bank n
IN
WRITE with burst of 4
T5
T5
NOP
NOP
D
256Mb: x4, x8, x16 SDRAM
t
IN
Precharge
RP - bank n
PRECHARGE Operation
T6
T6
NOP
D
NOP
D
OUT
t RP - bank n
Precharge
IN
© 1999 Micron Technology, Inc. All rights reserved.
Don’t Care
Don’t Care
T7
T7
D
NOP
NOP
D
t WR - bank m
OUT
t RP - bank m
IN
Write-back