M25P16-VME6G NUMONYX, M25P16-VME6G Datasheet - Page 32
![IC FLASH 16MBIT 75MHZ 8VDFPN](/photos/7/23/72370/m25p16-vme6g_sml.jpg)
M25P16-VME6G
Manufacturer Part Number
M25P16-VME6G
Description
IC FLASH 16MBIT 75MHZ 8VDFPN
Manufacturer
NUMONYX
Series
Forté™r
Specifications of M25P16-VME6G
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VDFPN
Clock Frequency
75MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
VDFPN
No. Of Pins
8
Base Number
25
Frequency
75MHz
Ic Generic
RoHS Compliant
Memory Configuration
2M X 8
Interface Type
Serial, SPI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P16-VME6G
Manufacturer:
MICRON
Quantity:
20 000
Instructions
6.11
32/55
Deep Power-down (DP)
Executing the Deep Power-down (DP) instruction is the only way to put the device in the
lowest consumption mode (the Deep Power-down mode). It can also be used as a software
protection mechanism, while the device is not in active use, as in this mode, the device
ignores all Write, Program and Erase instructions.
Driving Chip Select (S) High deselects the device, and puts the device in the Standby mode
(if there is no internal cycle currently in progress). But this mode is not the Deep Power-
down mode. The Deep Power-down mode can only be entered by executing the Deep
Power-down (DP) instruction, subsequently reducing the standby current (from I
as specified in
To take the device out of Deep Power-down mode, the Release from Deep Power-down and
Read Electronic Signature (RES) instruction must be issued. No other instruction must be
issued while the device is in Deep Power-down mode.
The Release from Deep Power-down and Read Electronic Signature (RES) instruction also
allows the electronic signature of the device to be output on Serial Data output (Q).
The Deep Power-down mode automatically stops at power-down, and the device always
powers up in the Standby mode.
The Deep Power-down (DP) instruction is entered by driving Chip Select (S) Low, followed
by the instruction code on Serial Data input (D). Chip Select (S) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the Deep Power-down (DP) instruction is not executed. As soon as
Chip Select (S) is driven High, it requires a delay of t
to I
Any Deep Power-down (DP) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 18. Deep Power-down (DP) instruction sequence
S
C
D
CC2
and the Deep Power-down mode is entered.
Table
0
14).
1
2
Instruction
3
4
5
6
Figure
7
18.
DP
t
Standby mode
before the supply current is reduced
DP
Deep Power-down mode
CC1
M25P16
AI03753D
to I
CC2
,