W25X40BVSNIG Winbond Electronics, W25X40BVSNIG Datasheet - Page 4
![IC SPI FLASH 4MBIT 8SOIC](/photos/7/23/72373/8-soic__3_9mm_width__sml.jpg)
W25X40BVSNIG
Manufacturer Part Number
W25X40BVSNIG
Description
IC SPI FLASH 4MBIT 8SOIC
Manufacturer
Winbond Electronics
Datasheet
1.W25X40BVSNIG.pdf
(51 pages)
Specifications of W25X40BVSNIG
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
104MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
W25X40BVSNIG
Manufacturer:
WINBOND
Quantity:
30 000
Part Number:
W25X40BVSNIG
Manufacturer:
WINBOND/华邦
Quantity:
20 000
Company:
Part Number:
W25X40BVSNIGT
Manufacturer:
VISHAY
Quantity:
2 000
The W25X10BV (1M-bit), W25X20BV (2M-bit) and the W25X40BV (4M-bit) Serial Flash memories
provides a storage solution for systems with limited space, pins and power. The 25X series offers
flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code
download applications as well as storing voice, text and data. The devices operate on a single 2.7V to
3.6V power supply with current consumption as low as 4mA active and 1µA for power-down. All
devices are offered in space-saving packages.
The W25X10BV/20BV/40BV arrays are organized into 512/1,024/2,048 programmable pages of 256-
bytes each. Up to 256 bytes can be programmed at a time using the Page Program instruction. Pages
can be erased in groups of 16 (sector erase), groups of 128 (32KB block erase), groups of 256 (block
erase) or the entire chip (chip erase). The W25X10BV/20BV/40BV has 32/64/128 erasable sectors
and 2/4/8 erasable 64KB blocks respectively. The small 4KB sectors allow for greater flexibility in
applications that require data and parameter storage. (See figure 2.)
The W25X10BV/20BV/40BV supports the standard Serial Peripheral Interface (SPI), and a high
performance dual output as well as Dual I/O SPI: Serial Clock, Chip Select, Serial Data DI (I/O0), DO
(I/O1). SPI clock frequencies of up to 104MHz are supported allowing equivalent clock rates of
208MHz when using the Fast Read Dual Output instruction. These transfer rates are comparable to
those of 8 and 16-bit Parallel Flash memories.
A Hold pin, Write Protect pin and programmable write protect, with top or bottom array control
features, provide further control flexibility. Additionally, the device supports JEDEC standard
manufacturer and device identification.
Family of Serial Flash Memories
SPI with Single / Dual Outputs / Dual I/O
Data Transfer up to 208M-bits / second
Efficient “Continuous Read Mode”
– W25X10BV: 1M-bit/128K-byte (131,072)
– W25X20BV: 2M-bit/256K-byte (262,144)
– W25X40BV: 4M-bit/512K-byte (524,288)
– 256-bytes per programmable page
– Uniform 4KB Sectors, 32KB & 64KB Blocks
– Clock, Chip Select, Data I/O, Data Out
– Optional Hold function for SPI flexibility
– Clock operation to 104MHz
– Fast Read Dual Output instruction
– Auto-increment Read capability
– Low Instruction overhead
– Continuous Read
– As few as 8 clocks to address memory
– Allows true XIP (execute in place) operation
1. GENERAL DESCRIPTION
2. FEATURES
- 4 -
Software and Hardware Write Protection
Flexible Architecture with 4KB sectors
Low Power Consumption, Wide
Space Efficient Packaging
– Write-Protect all or portion of memory
– Enable/Disable protection with /WP pin
– Top or bottom array protection
– Sector Erase (4K-bytes)
– Block Erase (32K and 64K-byte)
– Page program up to 256 bytes <1ms
– More than 100,000 erase/write cycles
– More than 20-year retention
Temperature Range
– Single 2.7 to 3.6V supply
– 4mA active current, 1µA Power-down (typ)
– -40° to +85°C operating range
– 8-pin SOIC 150-mil
– 8-pin SOIC 208-mil
– 8-pad WSON 6x5-mm
– 8-pin PDIP 300-mil
W25X10BV/20BV/40BV