W25Q16BVSSIG Winbond Electronics, W25Q16BVSSIG Datasheet - Page 43

• Manufacturer Part Number: W25Q16BVSSIG
• Description: IC SPI FLASH 16MBIT 8SOIC
• Manufacturer: Winbond Electronics

Specifications of W25Q16BVSSIG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (2M x 8)
• Speed: 104MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

W25Q16BV
11.2.24 Erase Resume (7Ah)
The Erase Resume instruction “7Ah” must be written to resume the Sector or Block Erase operation after
an Erase Suspend. The Resume instruction “7Ah” will be accepted by the device only if the SUS bit in the
Status Register equals to 1 and the BUSY bit equals to 0. After issued the SUS bit will be cleared from 1
to 0 immediately, the BUSY bit will be set from 0 to 1 within 200ns and the Sector or Block will complete
the erase operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume instruction “7Ah”
will be ignored by the device. The Erase Resume instruction sequence is shown in figure 23.
Resume instruction is ignored if the previous Erase Suspend operation was interrupted by unexpected
power off. It is also required that a subsequent Erase Suspend instruction not to be issued within a
minimum of time of “t
” following a previous Resume instruction.
SUS
Figure 23. Erase Resume Instruction Sequence Diagram
Publication Release Date: July 08, 2010
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Revision F