M27C512-12F1 STMicroelectronics, M27C512-12F1 Datasheet - Page 7

IC EPROM 512KBIT 120NS 28CDIP

M27C512-12F1

Manufacturer Part Number
M27C512-12F1
Description
IC EPROM 512KBIT 120NS 28CDIP
Manufacturer
STMicroelectronics
Datasheets

Specifications of M27C512-12F1

Format - Memory
EPROMs
Memory Type
UV EPROM
Memory Size
512K (64K x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-CDIP (0.600", 15.24mm) Window
Capacitance, Input
6 pF
Capacitance, Output
12 pF
Current, Input, Leakage
±10 μA (Read)
Current, Operating
30 mA (Read)
Current, Output, Leakage
±10 μA (Read)
Current, Supply
30 mA
Density
512K
Organization
64K×8
Package Type
FDIP28W
Temperature, Operating
0 to +70 °C
Temperature, Operating, Maximum
70 °C
Temperature, Operating, Minimum
0 °C
Time, Access
120 ns
Time, Fall
≤20 ns
Time, Rise
≤20 ns
Voltage, Input, High
6 V (Read)
Voltage, Input, High Level
2 V (Min.)
Voltage, Input, Low
0.8 V (Read)
Voltage, Input, Low Level
-0.3 V (Min.)
Voltage, Output, High
4.3 V (Read)
Voltage, Output, Low
0.4 V (Read)
Voltage, Programmable
11.5 V (Min.)
Voltage, Supply
5 V
Memory Configuration
64K X 8
Access Time
120ns
Supply Voltage Range
4.5V To 5V
Memory Case Style
DIP
No. Of Pins
28
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-1671-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M27C512-12F1
Manufacturer:
STM
Quantity:
892
Part Number:
M27C512-12F1
Manufacturer:
ST
Quantity:
1 000
Part Number:
M27C512-12F1
Manufacturer:
ST
0
Part Number:
M27C512-12F1
Manufacturer:
ST
Quantity:
20 000
Part Number:
M27C512-12F1
Manufacturer:
ST
Quantity:
11 391
Part Number:
M27C512-12F1
Manufacturer:
ST
Quantity:
14 463
Company:
Part Number:
M27C512-12F1
Quantity:
53
Part Number:
M27C512-12F1 (BULK)
Manufacturer:
ST
0
Part Number:
M27C512-12F1 @@@@@@@
Manufacturer:
ST
0
Part Number:
M27C512-12F1 DIP
Manufacturer:
ST
0
Part Number:
M27C512-12F1K
Manufacturer:
ST
Quantity:
20 000
M27C512
2.5
2.6
Figure 4.
Programming
When delivered (and after each erasure for UV EPROM), all bits of the M27C512 are in the
'1' state. Data is introduced by selectively programming '0's into the desired bit locations.
Although only '0's will be programmed, both '1's and '0's can be present in the data word.
The only way to change a '0' to a '1' is by die exposure to ultraviolet light (UV EPROM). The
M27C512 is in the programming mode when V
The data to be programmed is applied to 8 bits in parallel to the data output pins. The levels
required for the address and data inputs are TTL. V
M27C512 can use PRESTO IIB Programming Algorithm that drastically reduces the
programming time (typically less than 6 seconds). Nevertheless to achieve compatibility with
all programming equipments, PRESTO Programming Algorithm can be used as well.
PRESTO IIB programming algorithm
PRESTO IIB Programming Algorithm allows the whole array to be programmed with a
guaranteed margin, in a typical time of 6.5 seconds. This can be achieved with
STMicroelectronics M27C512 due to several design innovations described in the M27C512
datasheet to improve programming efficiency and to provide adequate margin for reliability.
Before starting the programming the internal MARGIN MODE circuit is set in order to
guarantee that each cell is programmed with enough margin. Then a sequence of 100µs
program pulses are applied to each byte until a correct verify occurs. No overprogram
pulses are applied since the verify in MARGIN MODE provides the necessary margin.
Programming flowchart
YES
NO
FAIL
= 25
++n
V CC = 6.25V, V PP = 12.75V
RESET MARGIN MODE
SET MARGIN MODE
CHECK ALL BYTES
NO
2nd: V CC = 4.2V
E = 100 s Pulse
1st: V CC = 6V
VERIFY
n = 0
Addr
Last
YES
YES
PP
NO
input is at 12.75V and E is pulsed to V
CC
is specified to be 6.25V ± 0.25V. The
++ Addr
AI00738B
Device operation
7/22
IL
.

Related parts for M27C512-12F1