CY7C199CN-12VXA Cypress Semiconductor Corp, CY7C199CN-12VXA Datasheet - Page 11
![IC SRAM 256KBIT 12NS 28SOJ](/photos/29/1/290176/soic28_sml.jpg)
CY7C199CN-12VXA
Manufacturer Part Number
CY7C199CN-12VXA
Description
IC SRAM 256KBIT 12NS 28SOJ
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet
1.CY7C199CN-15PXC.pdf
(18 pages)
Specifications of CY7C199CN-12VXA
Memory Size
256K (32K x 8)
Package / Case
28-SOJ
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Speed
12ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Access Time
12 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Current
85 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Timing Waveforms
Write Cycle 2
Notes
Document #: 001-06435 Rev. *E
13. This cycle is WE controlled, OE is HIGH during write.
14. Data in and/or out is high impedance if OE = V
15. During this period the IOs are in output state and input signals must not be applied.
16. This cycle is CE controlled.
17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
Data In/Out
Address
WE
CE
(CE controlled)
High Z
(continued)
[14, 16, 17]
IH
.
t
SA
t
AW
t
WC
Data-In Valid
t
SD
t
SCE
t
t
HA
HD
CY7C199CN
High Z
Page 11 of 18
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