M48Z35Y-70MH1F STMicroelectronics, M48Z35Y-70MH1F Datasheet - Page 13

• Manufacturer Part Number: M48Z35Y-70MH1F
• Description: IC NVSRAM 256KBIT 70NS 28SOIC
• Manufacturer: STMicroelectronics

Specifications of M48Z35Y-70MH1F

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 256K (32K x 8)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 28-SOIC, 28-SOH (8.48mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4728-2

M48Z35, M48Z35Y
2.4
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (see
is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, ST recommends connecting a Schottky
diode from V
is recommended for through hole and MBRS120T3 is recommended for surface mount).
Figure 9.
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
CC
Supply voltage protection
to V
SS
(cathode connected to V
V CC
Doc ID 2608 Rev 9
0.1µF
CC
CC
that drive it to values below V
bus. These transients can be reduced if
CC
, anode to V
V CC
V SS
DEVICE
CC
bus. The energy stored in the
SS
). (Schottky diode 1N5817
SS
Operating modes
by as much as
Figure
AI02169
13/24
9)