CY14B256L-SP35XI Cypress Semiconductor Corp, CY14B256L-SP35XI Datasheet - Page 11
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CY14B256L-SP35XI
Manufacturer Part Number
CY14B256L-SP35XI
Description
IC NVSRAM 256KBIT 35NS 48SSOP
Manufacturer
Cypress Semiconductor Corp
Type
NVSRAMr
Specifications of CY14B256L-SP35XI
Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
256K (32K x 8)
Speed
35ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-SSOP
Word Size
8b
Organization
32Kx8
Density
256Kb
Interface Type
Parallel
Access Time (max)
35ns
Operating Supply Voltage (typ)
3.3V
Package Type
SSOP
Operating Temperature Classification
Industrial
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
2.7V
Operating Temp Range
-40C to 85C
Pin Count
48
Mounting
Surface Mount
Supply Current
60mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY14B256L-SP35XI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Document Number: 001-54707 Rev. *F
AC Switching Characteristics
Switching Waveforms
SRAM Read Cycle
t
t
t
t
t
t
t
t
t
t
t
SRAM Write Cycle
t
t
t
t
t
t
t
t
t
t
Notes
ACE
RC
AA
DOE
OHA
LZCE
HZCE
LZOE
HZOE
PU
PD
WC
PWE
SCE
SD
HD
AW
SA
HA
HZWE
LZWE
11. WE must be HIGH during SRAM read cycles.
12. Device is continuously selected with CE and OE LOW.
13. These parameters are guaranteed by design and are not tested.
14. Measured ±200 mV from steady state output voltage.
15. If WE is low when CE goes low, the outputs remain in the high impedance state.
16. HSB must remain HIGH during READ and WRITE cycles.
[12]
[13]
[13]
[11]
Parameters
[12]
[13, 14]
Cypress
[13, 14]
[13, 14]
[13, 14]
[13, 14]
[13, 14,15]
Parameters
Data Output
Address
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
ACS
RC
AA
OE
OH
LZ
HZ
OLZ
OHZ
PA
PS
WC
WP
CW
DW
DH
AW
AS
WR
WZ
OW
Parameters
Alt
Figure 5. SRAM Read Cycle #1: Address Controlled
Previous Data Valid
Chip enable access time
Read cycle time
Address access time
Output enable to data valid
Output hold after address change
Chip enable to output active
Chip disable to output inactive
Output enable to output active
Output disable to output inactive
Chip enable to power active
Chip disable to power standby
Write cycle time
Write pulse width
Chip enable to end of write
Data setup to end of write
Data hold after end of write
Address setup to end of write
Address setup to start of write
Address hold after end of write
Write enable to output disable
Output active after end of write
t
Description
OHA
Address Valid
t
AA
t
RC
Min
25
25
20
20
10
20
–
3
–
0
–
0
–
–
3
0
–
0
0
3
25 ns
[11, 12, 16]
Output Data Valid
Max
25
10
25
25
12
10
10
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Min
45
45
30
30
15
30
–
–
–
3
3
–
0
–
0
–
0
0
0
3
45 ns
CY14B256LA
Max
45
45
20
15
15
45
15
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Page 11 of 22
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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