CY7C1512V18-250BZXI Cypress Semiconductor Corp, CY7C1512V18-250BZXI Datasheet - Page 24
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CY7C1512V18-250BZXI
Manufacturer Part Number
CY7C1512V18-250BZXI
Description
IC SRAM 72MBIT 250MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1512V18-167BZXC.pdf
(29 pages)
Specifications of CY7C1512V18-250BZXI
Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
72M (4M x 18)
Speed
250MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1512V18-250BZXI
Manufacturer:
CYPRESS
Quantity:
455
Company:
Part Number:
CY7C1512V18-250BZXI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Waveforms
Notes
Document #: 38-05489 Rev. *F
26. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1.
27. Outputs are disabled (High-Z) one clock cycle after a NOP.
28. In this example, if address A0 = A1, then data Q00 = D10 and Q01 = D11. Write data is forwarded immediately as read results. This note applies to the whole diagram.
CQ
RPS
WPS
Q
C
C
CQ
A
D
K
K
D10
A0
1
READ
t KHCH
t KH
t KH
t SA t HA
D11
A1
WRITE
2
t KHCH
t KL
t KL
t
t SA t HA
SC t
D30
A2
3
READ
t HC
Figure 5. Read/Write/Deselect Sequence
t CQOH
t KHKH
t CLZ
t CO
t SD
t CYC
D31
A3
4
WRITE
t HD
t CQOH
t CCQO
D50
A4
5
t CYC
READ
Q00
t KHKH
t DOH
t CCQO
D51
A5
WRITE
6
Q01
t CQDOH
t SD t HD
D60
7
NOP
Q20
CY7C1510V18, CY7C1525V18
CY7C1512V18, CY7C1514V18
[26, 27, 28]
D61
A6
WRITE
8
Q21
t CQD
DON’T CARE
NOP
9
Q40
t
CHZ
UNDEFINED
10
Q41
Page 24 of 29
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