CY7C1360A-150BGC Cypress Semiconductor Corp, CY7C1360A-150BGC Datasheet - Page 8
![IC SRAM 9MBIT 150MHZ 119BGA](/photos/7/26/72689/cy7c1360a-150bgc_sml.jpg)
CY7C1360A-150BGC
Manufacturer Part Number
CY7C1360A-150BGC
Description
IC SRAM 9MBIT 150MHZ 119BGA
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1360A-150BGC.pdf
(28 pages)
Specifications of CY7C1360A-150BGC
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
9M (256K x 36)
Speed
150MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
119-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1115
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1360A-150BGC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document #: 38-05258 Rev. *C
Introduction
Functional Overview
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
Maximum access delay from the clock rise (t
(133-MHz device).
The CY7C1360A/CY7C1362A supports secondary cache in
systems utilizing either a linear or interleaved burst sequence.
The interleaved burst order supports Pentium and i486
processors. The linear burst sequence is suited for processors
that utilize a linear burst sequence. The burst order is user
selectable, and is determined by sampling the MODE input.
Accesses can be initiated with either the Processor Address
Strobe (ADSP) or the Controller Address Strobe (ADSC).
Address advancement through the burst sequence is
controlled by the ADV input. A two-bit on-chip wraparound
burst counter captures the first address in a burst sequence
and automatically increments the address for the rest of the
burst access.
Byte Write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BW
for 1362A) inputs. A Global Write Enable (GW) overrides all
byte Write inputs and writes data to all four bytes. All writes are
simplified with on-chip synchronous self-timed Write circuitry.
Synchronous Chip Selects (CE
BGA) and an asynchronous Output Enable (OE) provide for
easy bank selection and output three-state control. ADSP is
ignored if CE
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW,
(2) chip selects are all asserted active, and (3) the Write
signals (GW, BWE) are all deasserted HIGH. ADSP is ignored
if CE
is stored into the address advancement logic and the Address
Register while being presented to the memory core. The corre-
sponding data is allowed to propagate to the input of the
Output Registers. At the rising edge of the next clock the data
is allowed to propagate through the output register and onto
the data bus within preliminary ns (200-MHz device) if OE is
active LOW. The only exception occurs when the SRAM is
emerging from a deselected state to a selected state, its
outputs are always three-stated during the first cycle of the
access. After the first cycle of the access, the outputs are
controlled by the OE signal. Consecutive single Read cycles
are supported. Once the SRAM is deselected at clock rise by
the chip select and either ADSP or ADSC signals, its output
will three-state immediately.
Single Write Accesses Initiated by ADSP
This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP is asserted LOW, and
(2) chip select is asserted active. The address presented is
loaded
advancement logic while being delivered to the RAM core. The
1
is HIGH. The address presented to the address inputs
into
1
is HIGH.
the
address
1
register
, CE
a,b,c,d
2
, CE
for 1360A and BW
3
and
for TQFP / CE
CO
the
) is 3.8 ns
address
1
for
a,b
Write signals (GW, BWE, and BW
ignored during this first cycle.
ADSP triggered Write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQx inputs is written into the corre-
sponding address location in the RAM core. If GW is HIGH,
then the Write operation is controlled by BWE and BWx
signals. The CY7C1360A/CY7C1362A provides byte Write
capability that is described in the Write cycle description table.
Asserting the Byte Write Enable input (BWE) with the selected
Byte Write (BW
CY7C1362A) input will selectively write to only the desired
bytes. Bytes not selected during a byte Write operation will
remain unaltered. A synchronous self-timed Write mechanism
has been provided to simplify the Write operations.
Because the CY7C1360A/CY7C1362A is a common I/O
device, the Output Enable (OE) must be deasserted HIGH
before presenting data to the DQ inputs. Doing so will
three-state the output drivers. As a safety precaution, DQ are
automatically three-stated whenever a Write cycle is detected,
regardless of the state of OE.
Single Write Accesses Initiated by ADSC
ADSC Write accesses are initiated when the following condi-
tions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is
deasserted HIGH, (3) chip select is asserted active, and (4)
the appropriate combination of the Write inputs (GW, BWE,
and BW
byte(s). ADSC triggered Write accesses require a single clock
cycle to complete. The address presented to A
into the address register and the address advancement logic
while being delivered to the RAM core. The ADV input is
ignored during this cycle. If a global Write is conducted, the
data presented to the DQ
address location in the RAM core. If a byte Write is conducted,
only the selected bytes are written. Bytes not selected during
a byte Write operation will remain unaltered. A synchronous
self-timed Write mechanism has been provided to simplify the
Write operations.
Because the CY7C1360A/CY7C1362A is a common I/O
device, the Output Enable (OE) must be deasserted HIGH
before presenting data to the DQ
three-state the output drivers. As a safety precaution, DQ
are automatically three-stated whenever a Write cycle is
detected, regardless of the state of OE.
Burst Sequences
The CY7C1360A/CY7C1362A provides a two-bit wraparound
counter, fed by A
linear burst sequence. The interleaved burst sequence is
designed specifically to support Intel
The linear burst sequence is designed to support processors
that follow a linear burst sequence. The burst sequence is user
selectable through the MODE input.
Asserting ADV LOW at clock rise will automatically increment
the burst counter to the next address in the burst sequence.
Both Read and Write burst operations are supported.
x
) are asserted active to conduct a Write to the desired
[1:0]
a,b,c,d
, that implements either an interleaved or
for CY7C1360A and BW
[x:0]
is written into the corresponding
[x:0]
®
x
) and ADV inputs are
Pentium
inputs. Doing so will
CY7C1360A
CY7C1362A
®
[17:0]
Page 8 of 28
applications.
is loaded
a,b
[x:0]
for