CY7C1370D-167AXI Cypress Semiconductor Corp, CY7C1370D-167AXI Datasheet - Page 22

IC SRAM 18MBIT 167MHZ 100LQFP

CY7C1370D-167AXI

Manufacturer Part Number
CY7C1370D-167AXI
Description
IC SRAM 18MBIT 167MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Type
Synchronousr
Datasheet

Specifications of CY7C1370D-167AXI

Memory Size
18M (512K x 36)
Package / Case
100-LQFP
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Speed
167MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
3.4 ns
Maximum Clock Frequency
167 MHz
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3.135 V
Maximum Operating Current
275 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
4
Operating Supply Voltage
3.3 V
Density
18Mb
Access Time (max)
3.4ns
Sync/async
Synchronous
Architecture
SDR
Clock Freq (max)
167MHz
Operating Supply Voltage (typ)
3.3V
Address Bus
19b
Package Type
TQFP
Operating Temp Range
-40C to 85C
Supply Current
275mA
Operating Supply Voltage (min)
3.135V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
100
Word Size
36b
Number Of Words
512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2136
CY7C1370D-167AXI

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Quantity
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CY7C1370D-167AXIT
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Switching Waveforms
Document Number: 38-05555 Rev. *K
Notes
25. For this waveform ZZ is tied LOW.
26. When CE is LOW, CE
27. Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved).Burst operations are optional.
In-Out (DQ)
ADDRESS
ADV/LD
Data
CEN
BW
CLK
WE
OE
CE
x
t
t
t
CENS
AS
CES
1
WRITE
D(A1)
is LOW, CE
A1
1
t
t
CENH
t
AH
CEH
2
WRITE
D(A2)
is HIGH and CE
2
A2
t
CH
t CYC
t
t
DS
CL
D(A2+1)
BURST
WRITE
D(A1)
3
3
Figure 5. Read/Write/Timing
is LOW. When CE is HIGH,CE
t
DH
DON’T CARE
D(A2)
READ
Q(A3)
A3
4
D(A2+1)
READ
Q(A4)
A4
5
t
t
CO
CLZ
1
is HIGH or CE
UNDEFINED
Q(A4+1)
BURST
READ
[25, 26, 27]
Q(A3)
6
t
DOH
t
2
OEHZ
is LOW or CE
WRITE
D(A5)
Q(A4)
A5
7
CY7C1370D, CY7C1372D
t
OEV
t
OELZ
3
is HIGH.
Q(A6)
Q(A4+1)
READ
A6
8
t
t
DOH
CHZ
WRITE
D(A7)
9
D(A5)
A7
DESELECT
Page 22 of 29
10
Q(A6)
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