NGTB25N120LWG ON Semiconductor, NGTB25N120LWG Datasheet - Page 2
NGTB25N120LWG
Manufacturer Part Number
NGTB25N120LWG
Description
IGBT Transistors 1200/25A IGBT LPT TO-247
Manufacturer
ON Semiconductor
Datasheet
1.NGTB25N120LWG.pdf
(8 pages)
Specifications of NGTB25N120LWG
Rohs
yes
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
50 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
77 W
Package / Case
TO-247
Mounting Style
Through Hole
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTIC
DYNAMIC CHARACTERISTIC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
DIODE CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
Gate to collector charge
Forward voltage
THERMAL CHARACTERISTICS
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Parameter
Rating
(T
J
= 25°C unless otherwise specified)
V
V
V
GE
V
V
CE
GE
CE
GE
= 0 V, V
= 600 V, I
V
V
= 15 V, I
V
= 20 V, V
V
V
= 0 V, I
V
GE
CC
V
CC
GE
V
GE
GE
GE
V
V
GE
Test Conditions
= 0 V, V
= 600 V, I
GE
= 600 V, I
GE
= V
= 0 V, I
= 20 V, V
T
R
http://onsemi.com
= 15 V, I
T
CE
R
= 0 V, I
J
J
F
g
= 0 V/ 15 V
g
C
= 0 V/ 15 V
CE
C
= 125°C
= 25°C
GE
= 10 W
= 25 A, T
= 1200 V, T
= 10 W
= 25 A, T
= 25 A, V
, I
CE
C
= 0 V, f = 1 MHz
C
C
F
C
C
= 500 mA
= 250 mA
CE
= 1200 V
= 25 A
= 25 A
= 25 A
= 25 A
2
= 0 V
J
J
GE
= 150°C
= 150°C
J =
= 15 V
Symbol
150°C
R
R
R
qJC
qJC
qJA
V
Symbol
V
t
t
t
t
V
(BR)CES
d(on)
d(off)
E
E
d(on)
d(off)
E
E
I
I
C
C
GE(th)
C
Q
Q
CEsat
CES
GES
t
t
t
t
Q
on
off
on
off
V
r
f
r
f
oes
ies
res
ge
gc
F
g
Value
0.65
1200
Min
1.5
4.5
40
−
−
−
−
−
−
−
−
235
160
250
225
4700
3.4
0.8
4.4
1.9
1.85
89
29
88
29
Typ
155
100
200
100
2.1
5.5
1.7
1.8
38
−
−
−
−
Max
100
2.3
6.5
0.5
2.0
1.8
−
−
−
−
−
°C/W
°C/W
°C/W
Unit
mJ
mJ
Unit
ns
ns
mA
nC
nA
pF
V
V
V
V