NGTB25N120LWG ON Semiconductor, NGTB25N120LWG Datasheet - Page 5

• Manufacturer Part Number: NGTB25N120LWG
• Description: IGBT Transistors 1200/25A IGBT LPT TO-247
• Manufacturer: ON Semiconductor

Specifications of NGTB25N120LWG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.3 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 77 W
• Package / Case: TO-247
• Mounting Style: Through Hole

10,000
1000
1000
100
100
10
10
1
1
5
375
V
I
Rg = 10 W
T
V
V
I
T
C
C
GE
J
J
CE
GE
= 25 A
425
= 150°C
= 25 A
= 150°C
15
V
= 15 V
= 600 V
= 15 V
CE
t
Figure 15. Switching Time vs. V
d(on)
Figure 13. Switching Time vs. Rg
, COLLECTOR−EMITTER VOLTAGE (V)
475
25
Rg, GATE RESISTOR (W)
525
35
1000
100
575
45
10
1
1
t
V
f
Figure 17. Reverse Bias Safe Operating Area
GE
625
55
t
= 15 V, T
r
V
CE
t
TYPICAL CHARACTERISTICS
d(off)
675
65
, COLLECTOR−EMITTER VOLTAGE (V)
CE
C
10
t
t
= 125°C
d(off)
d(on)
725
75
http://onsemi.com
t
t
f
r
775
85
5
100
1000
0.01
100
0.1
10
1
8
7
6
5
4
3
2
1
0
1
375
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
V
I
Rg = 10 W
T
C
J
GE
425
= 25 A
= 150°C
V
V
CE
CE
1000
= 15 V
dc operation
C
Figure 14. Energy Loss vs. V
Figure 16. Safe Operating Area
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
= 25°C
475
10
525
1 ms
575
100
625
50 ms
E
E
on
off
100 ms
675
CE
1000
725
775