IRGR4045DPBF International Rectifier, IRGR4045DPBF Datasheet - Page 4
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IRGR4045DPBF
Manufacturer Part Number
IRGR4045DPBF
Description
IGBT Transistors IR IGBT 600V 6A, COPAK-DPAK
Manufacturer
International Rectifier
Datasheet
1.IRGR4045DPBF.pdf
(11 pages)
Specifications of IRGR4045DPBF
Rohs
yes
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
6 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
39 W
Maximum Operating Temperature
+ 175 C
Package / Case
DPAK
Continuous Collector Current Ic Max
12 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
IRGR4045DPbF
4
20
15
10
10
10
5
0
8
6
4
2
0
8
6
4
2
0
Fig. 7 - Typ. IGBT Output Characteristics
0
5
5
Fig. 9 - Typical V
Fig. 11 - Typical V
2
T
J
= 175°C; tp = 80μs
10
10
T
T
J
4
J
= -40°C
V CE (V)
V GE (V)
V GE (V)
= 175°C
CE
6
I CE = 3.0A
I CE = 6.0A
I CE = 12A
Top
Bottom
CE
15
15
vs. V
I CE = 3.0A
I CE = 6.0A
I CE = 12A
vs. V
V
V
V
V
V
GE
GE
GE
GE
GE
8
GE
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
10
20
20
20
18
16
14
12
10
20
18
16
14
12
10
10
8
6
4
2
0
8
6
4
2
0
8
6
4
2
0
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 12 - Typ. Transfer Characteristics
0.0
4
5
Fig. 10 - Typical V
V GE, Gate-to-Emitter Voltage (V)
6
T J = 175°C
V
T J = 25°C
CE
175°C
-40°C
25°C
1.0
10
= 50V; tp = 10μs
8
T
J
V GE (V)
tp = 80μs
V F (V)
= 25°C
10
I CE = 3.0A
I CE = 6.0A
I CE = 12A
CE
2.0
15
12
vs. V
14
GE
www.irf.com
3.0
20
16