IRGR4045DPBF International Rectifier, IRGR4045DPBF Datasheet - Page 7

• Manufacturer Part Number: IRGR4045DPBF
• Description: IGBT Transistors IR IGBT 600V 6A, COPAK-DPAK
• Manufacturer: International Rectifier

Specifications of IRGR4045DPBF

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 6 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 39 W
• Maximum Operating Temperature: + 175 C
• Package / Case: DPAK
• Continuous Collector Current Ic Max: 12 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT

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0.001
0.01
0.01
0.1
0.1
10
10
1E-006
1
1E-006
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
D = 0.50
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
D = 0.50
0.05
0.02
0.10
0.01
0.20
0.05
0.01
0.20
0.10
0.02
SINGLE PULSE
( THERMAL RESPONSE )
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
1E-005
0.0001
t 1 , Rectangular Pulse Duration (sec)
t 1 , Rectangular Pulse Duration (sec)
0.0001


J
J


J

J

1
Ci= iRi
1

Ci= iRi

1
Ci
1
Ci
0.001
iRi
iRi
R
R
1
R
1
R
1
1


2
2
0.001

R
R

2
2
2
R
2
R
2
2
R

R

3
0.01
3
3
R
3

R

3
3
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc


R
4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
R
4


4
R
4
4
R
4
4
4


C
C


IRGR4045DPbF
Ri (°C/W) i (sec)
Ri (°C/W) i (sec)
0.01
0.2056
1.4132
3.3583
1.8245
0.0301
0.7200
0.7005
0.4479
0.1
0.000019
0.000095
0.001204
0.009127
0.000004
0.000067
0.000898
0.005416
0.1
1
7