EGP30F-E3/1 Vishay Semiconductors, EGP30F-E3/1 Datasheet - Page 3

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EGP30F-E3/1

Manufacturer Part Number
EGP30F-E3/1
Description
Rectifiers 300 Volt 3.0A 50ns Glass Passivated
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of EGP30F-E3/1

Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
300 V
Forward Voltage Drop
1.25 V at 2 A
Recovery Time
50 ns
Forward Continuous Current
3 A
Max Surge Current
125 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Package / Case
GP-20
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
1500
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88584
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.001
0.01
0.01
100
100
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
0.1
10
10
1
1
0.2
Fig. 4 - Typical Reverse Leakage Characteristics
0
Percent of Rated Peak Reverse Voltage (%)
T
J
0.4
= 150 °C
Instantaneous Forward Voltage (V)
20
0.6
T
0.8
J
40
= 150 °C
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
Pulse Width = 300 μs
1.0
1 % Duty Cycle
T
T
T
EGP30A thru EGP30D
EGP30F and EGP30G
J
J
J
60
= 25 °C
= 125 °C
= 75 °C
1.2
T
J
1.4
= 25 °C
80
This datasheet is subject to change without notice.
1.6
100
0.210 (5.3)
0.190 (4.8)
1.8
0.042 (1.07)
0.037 (0.94)
DIA.
DIA.
GP20
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
1.0 (25.4)
210
180
150
120
100
MIN.
MIN.
0.1
90
60
30
10
0
1
0.01
0
DiodesEurope@vishay.com
Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
Fig. 5 - Typical Junction Capacitance
EGP30A thru EGP30D
EGP30F and EGP30G
EGP30A thru EGP30G
0.1
1
t - Pulse Duration (s)
Reverse Voltage (V)
10
1
www.vishay.com/doc?91000
T
f = 1.0 MHz
V
100
J
sig
10
= 25 °C
= 50 mV
www.vishay.com
p-p
1000
100
3

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