VS-GA100TS120UPBF Vishay, VS-GA100TS120UPBF Datasheet - Page 5

• Manufacturer Part Number: VS-GA100TS120UPBF
• Description: IGBT Modules 182 Amp 1200 Volt Half-Bridge
• Manufacturer: Vishay

Specifications of VS-GA100TS120UPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 182 A
• Maximum Operating Temperature: + 150 C
• Package / Case: INT-A-PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 15

Revision: 26-Mar-12
Fig. 11 - Typical Switching Losses vs. Collector Current
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
100
Fig. 9 - Typical Switching Losses vs. Gate Resistance
For technical questions within your region: [e-mail], [e-mail],
40
35
30
25
20
10
60
50
40
30
20
10
0
1
10
0
0
Fig. 10 - Typical Switching Losses vs.
T
www.vishay.com
J
30
I
C
R
- Junction Temperature (°C)
I
C
20
50
= 100 A
G
Junction Temperature
- Collector Current (A)
- Gate Resistance (Ω)
I
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
C
= 200 A
60
I
C
= 50 A
100
30
90
150
40
120
150
200
50
5
16 000
12 000
1000
8000
4000
300
200
100
100
10
0
0
1
400
0.5
0
www.vishay.com/doc?91000
Fig. 13 - Typical Forward Voltage Drop vs.
Fig. 14 - Typical Stored Charge vs. dI
V
T
V
V
T
T
Safe operating area
V
GE
J
CE
J
J
R
CE
= 125 °C
= 125 °C
= 25 °C
= 720 V
V
measured at terminal (peak voltage)
= 20 V
1.0
Instantaneous Forward Current
- Collector to Emitter Voltage (V)
F
300
T
J
Fig. 12 - Reverse Bias SOA
- Forward Voltage Drop (V)
VS-GA100TS120UPbF
800
= 125 °C
1.5
Vishay Semiconductors
dI
600
F
/dt (A/µs)
1200
2.0
[e-mail]
T
900
J
= 25 °C
2.5
Document Number: 94428
1600
1200
I
I
I
F
F
F
3.0
= 200 A
= 100 A
= 50 A
F
/dt
1500
2000
3.5