VS-GA100TS120UPBF Vishay, VS-GA100TS120UPBF Datasheet - Page 5
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VS-GA100TS120UPBF
Manufacturer Part Number
VS-GA100TS120UPBF
Description
IGBT Modules 182 Amp 1200 Volt Half-Bridge
Manufacturer
Vishay
Datasheet
1.VS-GA100TS120UPBF.pdf
(10 pages)
Specifications of VS-GA100TS120UPBF
Product Category
IGBT Modules
Rohs
yes
Product
IGBT Silicon Modules
Configuration
Dual
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
182 A
Maximum Operating Temperature
+ 150 C
Package / Case
INT-A-PAK
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Factory Pack Quantity
15
Revision: 26-Mar-12
Fig. 11 - Typical Switching Losses vs. Collector Current
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
100
Fig. 9 - Typical Switching Losses vs. Gate Resistance
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
40
35
30
25
20
10
60
50
40
30
20
10
0
1
10
0
0
Fig. 10 - Typical Switching Losses vs.
T
www.vishay.com
J
30
I
C
R
- Junction Temperature (°C)
I
C
20
50
= 100 A
G
Junction Temperature
- Collector Current (A)
- Gate Resistance (Ω)
I
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
C
= 200 A
60
I
C
= 50 A
100
30
90
150
40
120
150
200
50
5
16 000
12 000
1000
8000
4000
300
200
100
100
10
0
0
1
400
0.5
0
www.vishay.com/doc?91000
Fig. 13 - Typical Forward Voltage Drop vs.
Fig. 14 - Typical Stored Charge vs. dI
V
T
V
V
T
T
Safe operating area
V
GE
J
CE
J
J
R
CE
= 125 °C
= 125 °C
= 25 °C
= 720 V
V
measured at terminal (peak voltage)
= 20 V
1.0
Instantaneous Forward Current
- Collector to Emitter Voltage (V)
F
300
T
J
Fig. 12 - Reverse Bias SOA
- Forward Voltage Drop (V)
VS-GA100TS120UPbF
800
= 125 °C
1.5
Vishay Semiconductors
dI
600
F
/dt (A/µs)
1200
2.0
DiodesEurope@vishay.com
T
900
J
= 25 °C
2.5
Document Number: 94428
1600
1200
I
I
I
F
F
F
3.0
= 200 A
= 100 A
= 50 A
F
/dt
1500
2000
3.5