VS-GA100TS120UPBF Vishay, VS-GA100TS120UPBF Datasheet - Page 7

• Manufacturer Part Number: VS-GA100TS120UPBF
• Description: IGBT Modules 182 Amp 1200 Volt Half-Bridge
• Manufacturer: Vishay

Specifications of VS-GA100TS120UPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 182 A
• Maximum Operating Temperature: + 150 C
• Package / Case: INT-A-PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 15

ORDERING INFORMATION TABLE
Revision: 26-Mar-12
50 V
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
* Driver same type as D.U.T.; V
Note: Due to the 50 V power supply, pulse width and inductor
Fig. 18 - Clamped Inductive Load Test Circuit
will increase to obtain rated I
6000 µF
100 V
www.vishay.com
Device code
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1000 V
C
= 80 % of V
d
L
1
2
3
4
5
6
7
8
9
Fig. 17e - Macro Waveforms for Figure 18a‘s Test Circuit
V
VS-
C
*
1
CE
-
-
-
-
-
-
-
-
-
(max)
t0
G
2
D.U.T.
Vishay Semiconductors product
Insulated gate bipolar transistor (IGBT)
Generation 4, IGBT silicon, DBC construction
Current rating (100 = 100 A)
Circuit configuration (T = Half-bridge)
Package indicator (INT-A-PAK)
Voltage rating (120 = 1200 V)
Speed/type (U = Ultrafast)
PbF = Lead (Pb)-free
A
3
t1
100
7
t2
4
T
5
V
0 - 480 V
G
Gate signal
device under test
Current D.U.T.
Voltage in D.U.T.
Current in D1
Fig. 19 - Pulsed Collector Current Test Circuit
www.vishay.com/doc?91000
S
6
VS-GA100TS120UPbF
120
7
Vishay Semiconductors
U
8
[e-mail]
PbF
9
Document Number: 94428
R
L
= =
4 x I
480 V
C
at 25 °C