NGTB15N120FLWG ON Semiconductor, NGTB15N120FLWG Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/4/495/on_semiconductor_sml.jpg)
NGTB15N120FLWG
Manufacturer Part Number
NGTB15N120FLWG
Description
IGBT Transistors 1200V/15A IGBT SOLAR/UPS
Manufacturer
ON Semiconductor
Datasheet
1.NGTB15N120FLWG.pdf
(10 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
120
100
2.0
1.5
1.0
0.5
2.5
2.0
1.5
1.0
0.5
80
60
40
20
0
0
0
8
0
0
V
V
I
Rg = 10 W
C
Figure 9. Switching Loss vs. Temperature
CE
GE
Figure 7. Diode Forward Characteristics
= 15 A
20
= 600 V
= 15 V
12
1
Figure 11. Switching Loss vs. I
T
J
, JUNCTION TEMPERATURE (°C)
I
40
C
V
, COLLECTOR CURRENT (A)
F
, FORWARD VOLTAGE (V)
16
2
60
E
E
on
off
E
E
80
20
3
off
on
T
J
100
= 25°C
24
4
V
V
T
Rg = 10 W
TYPICAL CHARACTERISTICS
120
J
CE
GE
= 150°C
T
= 600 V
= 15 V
J
C
28
= 150°C
5
140
http://onsemi.com
160
32
6
5
1000
1000
100
100
20
15
10
10
10
5
0
1
1
0
8
0
V
V
I
Rg = 10 W
Figure 10. Switching Time vs. Temperature
C
CE
GE
= 15 A
20
= 600 V
= 15 V
12
Figure 12. Switching Time vs. I
T
Figure 8. Typical Gate Charge
J
t
t
, JUNCTION TEMPERATURE (°C)
d(on)
I
d(off)
C
40
40
t
t
f
r
, COLLECTOR CURRENT (A)
Q
G
16
, GATE CHARGE (nC)
60
80
20
80
100
24
V
V
T
Rg = 10 W
120
120
J
CE
GE
V
= 150°C
t
t
d(off)
d(on)
CE
= 600 V
= 15 V
t
t
C
r
f
28
= 600 V
140 160
160
32