NGTB15N120FLWG ON Semiconductor, NGTB15N120FLWG Datasheet - Page 6

• Manufacturer Part Number: NGTB15N120FLWG
• Description: IGBT Transistors 1200V/15A IGBT SOLAR/UPS
• Manufacturer: ON Semiconductor

1000
0.01
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
2.5
2.0
1.5
1.0
0.5
0.1
10
0
0
1
5
375
1
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
Figure 17. Forward Bias Safe Operating Area
V
V
I
T
C
J
CE
GE
V
I
Rg = 10 W
T
= 15 A
C
425
= 150°C
15
J
GE
V
V
= 15 A
= 600 V
= 15 V
= 150°C
CE
dc operation
CE
Figure 15. Switching Loss vs. V
Figure 13. Switching Loss vs. Rg
= 15 V
C
, COLLECTOR−EMITTER VOLTAGE (V)
1 ms
, COLLECTOR−EMITTER VOLTAGE (V)
= 25°C
475
25
100 ms
Rg, GATE RESISTOR (W)
10
525
35
50 ms
575
45
625
55
100
TYPICAL CHARACTERISTICS
E
E
675
65
off
on
CE
E
E
725
75
http://onsemi.com
on
off
1000
775
85
6
1000
1000
1000
0.01
100
100
100
0.1
10
10
10
1
1
1
1
375
5
Figure 18. Reverse Bias Safe Operating Area
425
15
V
V
CE
CE
Figure 16. Switching Time vs. V
Figure 14. Switching Time vs. Rg
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
475
25
10
t
t
Rg, GATE RESISTOR (W)
d(off)
d(on)
t
t
V
f
r
GE
525
35
= 15 V, T
575
45
100
C
= 125°C
625
55
V
I
Rg = 10 W
T
V
V
I
T
C
C
675
J
GE
J
65
CE
GE
= 15 A
= 15 A
= 150°C
= 150°C
t
t
d(off)
d(on)
= 15 V
= 600 V
= 15 V
t
t
CE
f
r
1000
725
75
775
85