NVR1P02T1G ON Semiconductor, NVR1P02T1G Datasheet
NVR1P02T1G
Specifications of NVR1P02T1G
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NVR1P02T1G Summary of contents
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... J stg 150 R 300 °C/W qJA T 260 °C L Device NTR1P02T1G NTR1P02T3G NVR1P02T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX DS(on) D 148 mW @ −10 V −1.0 A P− ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( −10 mA (Positive Temperature Coefficient) Zero Gate Voltage Drain Current (V = − 25° ...
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V 2 −4.5 V 1.75 1.5 1.25 1 0.75 0.5 0. 0.25 0.5 0.75 1 1.25 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.45 0 −4 0.35 0.3 ...
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C iss 250 C rss 200 150 100 −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 ...
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... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...