NVR1P02T1G ON Semiconductor, NVR1P02T1G Datasheet - Page 3
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NVR1P02T1G
Manufacturer Part Number
NVR1P02T1G
Description
MOSFET AUTOMOTIVE MOSFET
Manufacturer
ON Semiconductor
Datasheet
1.NVR1P02T1G.pdf
(5 pages)
Specifications of NVR1P02T1G
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 1 A
Resistance Drain-source Rds (on)
148 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Minimum Operating Temperature
- 55 C
Power Dissipation
400 mW
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NVR1P02T1G
Manufacturer:
ON/安森美
Quantity:
20 000
2.25
1.75
1.25
0.75
0.25
0.45
0.35
0.25
0.15
0.05
2.5
1.5
0.5
0.4
0.3
0.2
0.1
2.5
1.5
0.5
2
1
0
2
1
0
−45
0
0.1
Figure 3. On−Resistance versus Drain Current
−V
V
I
V
0.25
GS
−4.5 V
D
0.2
−20
GS
Figure 5. On−Resistance Variation with
DS
Figure 1. On−Region Characteristics
= −1.5 A
= −4.5 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= −10 V
T
0.3
J
0.5
, JUNCTION TEMPERATURE (°C)
−I
5
−4 V
D
, DRAIN CURRENT (AMPS)
0.4
and Temperature
0.75
30
Temperature
0.5
1
55
0.6
1.25
80
V
0.7
GS
−3.5 V
−3 V
1.5
= −2.5 V
105
T
T
T
0.8
J
J
J
T
= 150°C
= −40°C
= 25°C
J
= 25°C
1.75
130
http://onsemi.com
0.9
155
2
1
3
0.225
0.175
0.125
0.075
0.275
1000
1.75
1.25
0.75
0.25
0.25
0.15
0.05
100
1.5
0.5
0.2
0.1
10
2
1
0
1
1
0.2
1
Figure 4. On−Resistance versus Drain Current
V
Figure 6. Drain−to−Source Leakage Current
V
V
GS
−V
GS
DS
−V
3
0.4
DS
= 0 V
GS
= −10 V
≥ −10 V
1.5
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
5
−I
D
0.6
, DRAIN CURRENT (AMPS)
7
2
and Temperature
versus Voltage
T
T
J
J
9
= 150°C
0.8
= 125°C
T
J
= 125°C
2.5
T
T
11
T
J
J
J
= 150°C
= −40°C
= 25°C
1
13
3
15
1.2
T
T
J
J
17
= −40°C
= 25°C
3.5
1.4
19
1.6
21
4