BZT52H-C12 T/R NXP Semiconductors, BZT52H-C12 T/R Datasheet - Page 10
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BZT52H-C12 T/R
Manufacturer Part Number
BZT52H-C12 T/R
Description
Zener Diodes DIODE ZENER 5 PCT TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BZT52H-C3V9_TR.pdf
(13 pages)
Specifications of BZT52H-C12 T/R
Product Category
Zener Diodes
Rohs
yes
Zener Voltage
12.05 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
8 mV/k
Power Dissipation
830 mW
Maximum Reverse Leakage Current
0.1 uA
Maximum Zener Impedance
10 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOD-123F
Configuration
Single
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BZT52H-C12,115
NXP Semiconductors
12. Revision history
Table 12.
BZT52H_SER
Product data sheet
Document ID
BZT52H_SER v.3
Modifications:
BZT52H_SER v.2
BZT52H_SER v.1
Revision history
Release date
20101207
20091115
20051222
•
•
•
•
•
Added selection B.
Section 1.2 “Features and
Table 2
Section 8 “Test
Section 13 “Legal
“Pinning”: graphic symbol updated.
All information provided in this document is subject to legal disclaimers.
information”: added.
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Rev. 3 — 7 December 2010
information”: updated.
benefits”: amended.
Single Zener diodes in a SOD123F package
Change notice
-
-
-
BZT52H series
Supersedes
BZT52H_SER v.2
BZT52H_SER v.1
-
© NXP B.V. 2010. All rights reserved.
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