BZT52H-C12 T/R NXP Semiconductors, BZT52H-C12 T/R Datasheet - Page 8
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BZT52H-C12 T/R
Manufacturer Part Number
BZT52H-C12 T/R
Description
Zener Diodes DIODE ZENER 5 PCT TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BZT52H-C3V9_TR.pdf
(13 pages)
Specifications of BZT52H-C12 T/R
Product Category
Zener Diodes
Rohs
yes
Zener Voltage
12.05 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
8 mV/k
Power Dissipation
830 mW
Maximum Reverse Leakage Current
0.1 uA
Maximum Zener Impedance
10 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOD-123F
Configuration
Single
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BZT52H-C12,115
NXP Semiconductors
8. Test information
9. Package outline
10. Packing information
BZT52H_SER
Product data sheet
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Table 11.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
BZT52H-B2V4 to
BZT52H-C75
Fig 5.
For further information and the availability of packing methods, see
Package outline SOD123F
Packing methods
All information provided in this document is subject to legal disclaimers.
Package
SOD123F
Dimensions in mm
Rev. 3 — 7 December 2010
3.6
3.4
Description
4 mm pitch, 8 mm tape and reel
2.7
2.5
0.70
0.55
1.7
1.5
Single Zener diodes in a SOD123F package
1
2
0.55
0.35
BZT52H series
Section
1.2
1.0
0.25
0.10
[1]
04-11-29
14.
Packing quantity
3000
-115
© NXP B.V. 2010. All rights reserved.
10000
-135
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